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2SC4135S-TL-E

Part No 2SC4135S-TL-E
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS NPN 100V 2A TPFA  /  Bipolar (BJT) Transistor NPN 100 V 2 A 120MHz 1 W Surface Mount TP-FA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Tape & Reel
Transistor Type NPN
Current - Collector (Ic) (Max) 2 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 5V
Power - Max 1 W
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TP-FA
Base Product Number 2SC4135
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 2SC4135S-TL-E-ND,2SC4135S-TL-EOSCT,ONSONS2SC4135S-TL-E,2SC4135S-TL-EOSDKR,2156-2SC4135S-TL-E,2SC4135S-TL-EOSTR
Standard Package 700
Win Source Part Number 1037132-2SC4135S-TL-E
Ultra Librarian 3D Model Ultra Librarian 2SC4135S-TL-E CAD Model

Description

ON Semiconductor 2SC4135S-TL-E Bipolar Transistor

The 2SC4135S-TL-E is a high-quality NPN bipolar transistor manufactured by ON Semiconductor, a renowned leader in the semiconductor industry. This transistor is designed to meet a wide range of requirements for various electronic applications, making it an ideal component for designers and engineers looking to build reliable and efficient circuits.

Key Features

  • Device Type: NPN Bipolar Transistor
  • Configuration: Single
  • Collector-Emitter Voltage (VCEO): 50V
  • Collector-Base Voltage (VCBO): 60V
  • Emitter-Base Voltage (VEBO): 7V
  • Collector Current (IC): 1A
  • Power Dissipation (Pd): 1W
  • DC Current Gain (hFE): 100 to 320 at 500mA
  • Operating Temperature Range: -55°C to +150°C
  • Package: Surface-Mount, SOT-89

Applications

The 2SC4135S-TL-E transistor is versatile and can be used in a variety of electronic circuits. It is particularly suitable for applications such as:

  • Audio frequency amplifier stages
  • Switching circuits
  • Driver stages in high-fidelity amplifiers and television circuits
  • Regulatory functions in power supplies
  • General-purpose switching and amplification

Product Advantages

The 2SC4135S-TL-E transistor offers several advantages for electronic designs. Its high current gain ensures efficient amplification, while the robust voltage ratings provide a good safety margin for various applications. The device's power dissipation capability allows for reasonable thermal performance, which is critical for reliability and longevity. Additionally, the SOT-89 package is compact and suitable for surface-mount technology, making it easy to integrate into modern PCB designs.

Quality and Reliability

As with all ON Semiconductor products, the 2SC4135S-TL-E transistor is manufactured to high standards, ensuring that it meets the company's stringent quality and reliability criteria. This component is designed for a long operational life and stable performance, which is essential for professional electronic equipment.

For detailed specifications and application notes, designers should consult the official datasheet provided by ON Semiconductor. This will ensure the correct implementation of the 2SC4135S-TL-E transistor in their electronic projects.

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