The 2SC4412-5-TB-E is a high-performance NPN bipolar transistor developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This transistor is designed for general-purpose amplifier and switching applications, offering a balanced mix of speed and power handling capabilities.

Key Features:

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 50V
• Current - Collector (Ic) (Max): 150mA
• Current - Collector Cutoff (Max): 1µA
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 6V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: EMT3
• Packaging: Tape & Reel (TR)

Applications:

The 2SC4412-5-TB-E transistor is suitable for a wide range of applications due to its versatile specifications. It is commonly used in:

• Audio amplifiers
• Signal processing
• Power management
• Switching circuits
• Driver stages in hi-fi amplifiers and television circuits

Quality and Reliability:

ON Semiconductor is committed to delivering high-quality products. The 2SC4412-5-TB-E transistor is built with the company's rigorous standards for reliability and performance, ensuring that it meets the requirements of the most demanding electronic applications.

Environmental Compliance:

The 2SC4412-5-TB-E is designed with environmental responsibility in mind. It complies with RoHS (Restriction of Hazardous Substances) directives, making it suitable for use in environmentally sensitive applications and helping manufacturers to create eco-friendly products.