ON Semiconductor 2SC5227-5 Product Overview
The 2SC5227-5 is a high-quality NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This semiconductor device is designed for general-purpose amplifier and switching applications, offering reliable performance across a wide range of operating conditions. Its robust construction and excellent electrical characteristics make it suitable for a variety of electronic circuits.
Key Features
- High Current Gain Bandwidth Product: The 2SC5227-5 provides a high transition frequency, making it suitable for applications requiring fast switching and high-frequency operation.
- Low Collector-Emitter Saturation Voltage: This feature ensures lower power loss and greater efficiency, especially important in battery-operated devices where power conservation is crucial.
- High Power Dissipation: With the ability to handle significant power levels, this transistor can be used in more demanding applications without the risk of overheating.
- Complementary PNP Type Available: The 2SC5227-5 has a complementary PNP type, allowing for flexibility in designing push-pull amplifier stages and other complementary configurations.
Applications
- Audio Frequency Amplifier Stages
- Signal Processing Circuits
- Switching Regulators
- Driver Stages in Hi-Fi Amplifiers
- Control Systems
Electrical Specifications
Parameter
Value
Collector-Emitter Voltage (V<sub>CEO)
120 V
Collector-Base Voltage (V<sub>CBO)
140 V
Emitter-Base Voltage (V<sub>EBO)
6 V
Collector Current (I<sub>C)
1.5 A
Total Device Dissipation (P<sub>D)
25 W
Transition Frequency (f<sub>T)
100 MHz
Operating and Storage Junction Temperature Range
-55°C to +150°C
With its combination of high performance, reliability, and versatility, the 2SC5227-5 from ON Semiconductor is an excellent choice for designers looking to create efficient and durable electronic products.