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2SC5227-5

Part No 2SC5227-5
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description RF NPN Epitaxial Planar Silicon Transistor
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer ON Semiconductor
Win Source Part Number 156980-2SC5227-5
Popularity Low
Supply and Demand Status Sufficient
Family Name 2SC5227
Introduction Date May 19, 2008
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SC5227-5 CAD Model

Description

ON Semiconductor 2SC5227-5 Product Overview

The 2SC5227-5 is a high-quality NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This semiconductor device is designed for general-purpose amplifier and switching applications, offering reliable performance across a wide range of operating conditions. Its robust construction and excellent electrical characteristics make it suitable for a variety of electronic circuits.

Key Features

  • High Current Gain Bandwidth Product: The 2SC5227-5 provides a high transition frequency, making it suitable for applications requiring fast switching and high-frequency operation.
  • Low Collector-Emitter Saturation Voltage: This feature ensures lower power loss and greater efficiency, especially important in battery-operated devices where power conservation is crucial.
  • High Power Dissipation: With the ability to handle significant power levels, this transistor can be used in more demanding applications without the risk of overheating.
  • Complementary PNP Type Available: The 2SC5227-5 has a complementary PNP type, allowing for flexibility in designing push-pull amplifier stages and other complementary configurations.

Applications

  • Audio Frequency Amplifier Stages
  • Signal Processing Circuits
  • Switching Regulators
  • Driver Stages in Hi-Fi Amplifiers
  • Control Systems

Electrical Specifications

Parameter Value Collector-Emitter Voltage (V<sub>CEO) 120 V Collector-Base Voltage (V<sub>CBO) 140 V Emitter-Base Voltage (V<sub>EBO) 6 V Collector Current (I<sub>C) 1.5 A Total Device Dissipation (P<sub>D) 25 W Transition Frequency (f<sub>T) 100 MHz Operating and Storage Junction Temperature Range -55°C to +150°C

With its combination of high performance, reliability, and versatility, the 2SC5227-5 from ON Semiconductor is an excellent choice for designers looking to create efficient and durable electronic products.

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