The 2SC5536A-TL-H from ON Semiconductor is a high-quality NPN bipolar transistor that offers excellent performance for a wide range of electronic applications. This component is designed to meet the rigorous demands of modern electronic circuits, providing reliable operation and a high level of efficiency.
Key Features
- High Frequency Operation: With a transition frequency (fT) of 12 GHz, the 2SC5536A-TL-H is ideal for high-speed switching and amplification, making it perfect for RF and microwave applications.
- Low Noise Figure: A low noise figure ensures minimal signal distortion, which is critical for applications where signal integrity is paramount, such as in communication systems and precision instrumentation.
- High Power Gain: The transistor provides a high power gain, which is beneficial when amplifying weak signals without significant loss of power.
- Small Package: Enclosed in a compact ROHM package, the 2SC5536A-TL-H saves valuable board space without compromising performance, making it suitable for densely-packed PCBs.
Applications
The 2SC5536A-TL-H is versatile and can be used in a variety of applications, including:
- RF amplifiers
- Oscillators
- Low noise amplifiers (LNA)
- Microwave communication systems
- High-speed switches
Product Specifications
Parameter
Value
Collector-Emitter Voltage (Vceo)
12 V
Collector Current (Ic)
50 mA
Power Dissipation (Pd)
150 mW
Operating Temperature Range
-55°C to +150°C
With its robust design and superior specifications, the 2SC5536A-TL-H from ON Semiconductor is a reliable choice for designers and engineers looking to enhance the performance of their electronic projects. Whether for commercial or industrial applications, this transistor is engineered to deliver consistent results and help drive innovation in the electronics industry.