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2SC5658M3T5G

Part No 2SC5658M3T5G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 0.1A SOT-723
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 400mV @ 5mA, 60mA
Collector Cut-off Current(Max) 500nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 1mA, 6V
Maximum Power Dissipation 260mW
Frequency - Transition 180MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-723
Win Source Part Number 005908-2SC5658M3T5G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC5658M3T5G CAD Model

Description

2SC5658M3T5G - NPN Bipolar Transistor

The 2SC5658M3T5G is a high-quality NPN bipolar transistor designed and manufactured by ON Semiconductor, a trusted leader in the semiconductor industry. This component is specifically designed to offer excellent performance in a wide range of electronic applications, including switching and amplification in consumer, industrial, and telecommunication devices.

Key Features:

  • Transistor Type: NPN - This bipolar junction transistor (BJT) has an NPN configuration, making it suitable for use as a switch or amplifier where a negative current is required for operation.
  • Collector-Emitter Voltage (VCEO): The 2SC5658M3T5G can withstand up to 50V between its collector and emitter, providing a good voltage handling capability for various circuits.
  • Collector Current (IC): It supports a collector current of up to 150mA, allowing it to handle moderate current loads in electronic circuits.
  • Power Dissipation (Pd): With a power dissipation of 200mW, this transistor can manage a fair amount of power, making it suitable for small to medium power applications.
  • DC Current Gain (hFE): The device offers a high DC current gain, ranging from 120 to 560, which provides efficient current amplification in electronic circuits.
  • High-Speed Switching: The fast switching times make the 2SC5658M3T5G an excellent choice for applications requiring quick response times.
  • Package: Housed in an SOT-723 package, it is compact and suitable for space-constrained applications.
  • RoHS Compliant: The product is compliant with RoHS standards, ensuring that it is free from hazardous substances and environmentally friendly.

Applications:

The versatile 2SC5658M3T5G transistor is ideal for a variety of applications, including:

  • General purpose switching
  • Audio amplifiers
  • Signal processing
  • Driver stages in hi-fi amplifiers
  • Control systems
  • Telecommunication circuits

With its robust performance and ON Semiconductor's reputation for quality, the 2SC5658M3T5G NPN bipolar transistor is an excellent choice for designers and engineers looking to enhance the efficiency and reliability of their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
685+ $0.0734 $50.2790
1,660+ $0.0603 $100.0980
2,570+ $0.0584 $150.0880
3,540+ $0.0565 $200.0100
4,580+ $0.0546 $250.0680
6,125+ $0.0490 $300.1250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 685 pcs
Order Increment : 1 pcs
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