ON Semiconductor 2SC930 Product Overview

The 2SC930, from ON Semiconductor, is a high-performance NPN bipolar junction transistor (BJT) designed for a wide array of electronic applications. This versatile component is well-suited for amplification and switching purposes, thanks to its excellent gain characteristics and fast switching speeds.

Key Features

• Voltage Ratings: The 2SC930 boasts a collector-emitter voltage (V<sub>CEO) of 35V, ensuring it can handle moderate voltage applications with ease.
• Current Capacity: With a continuous collector current (I<sub>C) rating of 50mA, this transistor can drive a variety of loads in electronic circuits.
• Power Dissipation: The device has a power dissipation (P<sub>D) of 300mW, which allows it to sustain moderate power levels without overheating.
• High Gain Bandwidth Product: The 2SC930 offers a transition frequency (f<sub>T) typically around 600MHz, making it suitable for high-frequency applications.
• Low Noise: It exhibits low noise characteristics, making it ideal for audio amplifiers and signal processing where maintaining signal integrity is crucial.

Applications

The 2SC930 is versatile enough to be used in various electronic circuits, including:

• Audio frequency amplifier stages
• Signal processing circuits
• Driver stages in high-fidelity amplifiers
• Switching networks
• Oscillator circuits

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the 2SC930 is no exception. It is built to the highest standards, ensuring reliability and performance consistency. Whether for mass production or specialized applications, the 2SC930 is a dependable choice for designers and engineers looking for a robust NPN transistor.

Environmental Compliance

The 2SC930 is designed with environmental responsibility in mind. It complies with RoHS directives, which means it is free from hazardous substances like lead, mercury, and cadmium. This compliance ensures that the product is suitable for use in a variety of markets, including those with strict environmental regulations.