The BFU730F,115 is a cutting-edge RF Bipolar Junction Transistor (BJT) from NXP Semiconductors, designed to deliver high performance in a wide range of radio frequency applications. This NPN transistor is a part of NXP's extensive portfolio of RF products that are known for their reliability, efficiency, and innovation.

Key Features

• High Transition Frequency (fT): The BFU730F,115 boasts an impressive transition frequency which ensures excellent performance in high-frequency operations.
• Low Noise Figure: With its low noise figure, this transistor is ideal for applications where signal clarity is paramount, such as in sensitive RF receivers.
• High Power Gain: The device provides a high power gain, which is beneficial for amplification purposes, making it suitable for a variety of RF amplification roles.
• Surface-Mount Package: The transistor comes in a small SOT89 plastic package, making it suitable for surface-mount technology (SMT) and saving valuable board space.

Applications

The BFU730F,115 is versatile and can be used in various applications, including but not limited to:

• RF front-end applications
• Low-noise amplifiers for wireless communication
• Global Positioning System (GPS) receivers
• Telecommunication infrastructure
• RFID readers
• Satellite communication systems

Product Specifications

Parameter Specification Configuration Single Collector- Emitter Voltage (Vceo) 12V Collector Current (Ic) 30mA DC Current Gain (hFE) Minimum 25 at 10mA, 5V Power Dissipation (Pd) 0.33W Operating Temperature Range -65°C to +150°C

Quality and Reliability

NXP Semiconductors is committed to the highest standards of quality and reliability, and the BFU730F,115 is no exception. This product is designed to meet the rigorous demands of the electronics industry and provide consistent performance over its operational lifespan.