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2SD1681S

Part No 2SD1681S
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Trans GP BJT NPN 18V 1.2A 3-Pin TO-126ML
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer ON Semiconductor
Win Source Part Number 157789-2SD1681S
Popularity Low
Supply and Demand Status Balance
Family Name 2SD1668
Introduction Date January 13, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SD1681S CAD Model

Description

The ON Semiconductor 2SD1681S is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile component is well-suited for audio frequency amplifier applications and can be utilized in various switching and amplification circuits due to its impressive electrical characteristics.

Key Features:

  • High Current Capacity: The 2SD1681S transistor is capable of handling significant current, making it ideal for applications that require a robust current flow.
  • Low Saturation Voltage: It offers a low collector-emitter saturation voltage, which ensures efficient operation and helps to minimize power loss.
  • High Power Dissipation: With a high power dissipation rating, this transistor can withstand substantial energy without compromising its performance, leading to reliable operation in demanding situations.
  • Excellent Gain Characteristics: It features high DC current gain (hFE) levels, which allows for better signal amplification across various loads.

Applications:

The 2SD1681S from ON Semiconductor is a versatile component that can be deployed in a multitude of applications. Its primary use is in audio frequency amplifier systems where reliable and consistent performance is key. Additionally, it is suitable for power switching circuits, driver stages in high-fidelity amplifiers, and as a part of discrete power management solutions. Its robustness also makes it a good choice for commercial and industrial electronic devices where longevity and durability are necessary.

Technical Specifications:

  • Transistor Polarity: NPN
  • Collector-Emitter Voltage (VCEO): 80V
  • Collector-Base Voltage (VCBO): 100V
  • Emitter-Base Voltage (VEBO): 6V
  • Collector Current (IC): 3A
  • Power Dissipation (Pc): 25W
  • DC Current Gain (hFE): 40 to 320
  • Operating Temperature Range: -55°C to +150°C

The 2SD1681S NPN transistor is a testament to ON Semiconductor's commitment to providing high-quality, reliable components for the electronics industry. With its superior performance and versatility, it stands out as an excellent choice for designers and engineers looking to enhance their electronic designs.

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