ON Semiconductor 2SK2170-TL-E N-Channel MOSFET
The 2SK2170-TL-E from ON Semiconductor is a high-performance N-Channel MOSFET that offers excellent power efficiency and reliability for a wide range of applications. This semiconductor device is designed to handle high currents and voltages with ease, making it an ideal choice for power management tasks in electronic circuits.
Key Features:
- Low On-Resistance: The device features very low on-resistance, which reduces power loss and improves total system efficiency.
- High-Speed Switching: With its fast switching capabilities, the 2SK2170-TL-E is suitable for high-speed applications, ensuring minimal energy wastage during the transition phases.
- High Drain-Source Voltage (VDSS): It can withstand high drain-source voltages, offering robust performance for high-voltage applications.
- High Continuous Drain Current (ID): The device supports a high level of continuous current, making it capable of handling heavy loads.
- Low Gate Charge (Qg): A lower gate charge allows for reduced switching energy and faster operation.
- Surface Mount Package: The 2SK2170-TL-E comes in a compact surface-mount package, making it suitable for space-constrained applications.
Applications:
The 2SK2170-TL-E is versatile and can be used in a variety of electronic devices and systems, including:
- Power supplies and DC/DC converters
- Motor drives and controllers
- Automotive applications
- Switching regulators
- Inverters
- LED lighting solutions
Product Specifications:
The 2SK2170-TL-E has the following specifications that make it a reliable component for your power management needs:
Parameter
Value
Drain-Source Voltage (VDSS)
60V
Continuous Drain Current (ID)
50A
Power Dissipation (PD)
45W
Operating Temperature Range
-55°C to +150°C
ON Semiconductor's commitment to quality ensures that the 2SK2170-TL-E MOSFET meets the highest industry standards for performance and reliability. Whether you are designing power supplies or integrating into automotive technology, this MOSFET is a solid choice for efficient and effective power management.