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2SK3614-TD-E

Part No 2SK3614-TD-E
Manufacturer ON Semiconductor
Catalog JFETs (Junction Field Effect)
Description High field Effect Transistor IC
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family JFETs(Junction Field Effect)
Manufacturer ON Semiconductor
Win Source Part Number 160195-2SK3614-TD-E
Popularity Low
Supply and Demand Status Limited
Family Name 2SK3614
Introduction Date September 12, 2003
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian 2SK3614-TD-E CAD Model

Description

ON Semiconductor 2SK3614-TD-E Power MOSFET

The ON Semiconductor 2SK3614-TD-E is a robust N-channel Power MOSFET designed to deliver high efficiency and reliability for a wide range of applications. This electronic component is a testament to ON Semiconductor's commitment to providing innovative solutions that meet the evolving needs of the electronics industry. The 2SK3614-TD-E is particularly well-suited for use in power management tasks, including switching regulators, converters, and motor control systems.

Key Features:

  • Low On-Resistance: The device features a low on-resistance, which reduces conduction losses and improves overall efficiency in applications.
  • High-Speed Switching: With its fast switching capabilities, the 2SK3614-TD-E is capable of operating at high frequencies, making it suitable for high-speed power switching applications.
  • High Breakdown Voltage: The MOSFET has a high drain-to-source breakdown voltage, providing a robust barrier against voltage spikes and surges, and ensuring the longevity of the device under stressful conditions.
  • Low Drive Voltage: It operates at low drive voltages, which makes it compatible with a variety of control circuits and reduces power consumption.

Applications:

The 2SK3614-TD-E is versatile and can be used in various applications, such as:

  • DC/DC converters
  • Power supplies
  • Motor drives
  • Automotive applications
  • Switching regulators

Product Specifications:

This Power MOSFET comes with the following specifications:

  • Drain-to-Source Voltage (V<sub>DSS): 60V
  • Continuous Drain Current (I<sub>D): 50A
  • Power Dissipation (P<sub>D): 45W
  • Operating Temperature Range: -55°C to +150°C

The 2SK3614-TD-E is available in a TO-252 (DPAK) package, which is designed for surface mount technology (SMT) and offers excellent thermal performance. Its compact size and low profile make it suitable for space-constrained applications. With its combination of efficiency, speed, and reliability, the ON Semiconductor 2SK3614-TD-E Power MOSFET is an ideal choice for designers looking to enhance the performance of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,300 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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