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3LN01S-TL-E

Part No 3LN01S-TL-E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 30V 0.15A 3-Pin SMCP T/R / MOSFET N-CH 30V 150MA SMCP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Max Gate Charge 1.58nC @ 10V
Max Input Capacitance 7pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 3.7 Ohm @ 80mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SMCP
Dimension SC-75, SOT-416
Win Source Part Number 006133-3LN01S-TL-E
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name 3LN01S
Introduction Date July 04, 2006
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 3LN01S-TL-E CAD Model

Description

The ON Semiconductor 3LN01S-TL-E is a high-performance, N-channel MOSFET that offers excellent efficiency and power management for a wide range of applications. Designed with state-of-the-art technology, this MOSFET is ideal for use in power conversion and switching circuits where low on-resistance and high-speed operation are required.

Key Features

  • Low On-Resistance: The 3LN01S-TL-E features a low on-resistance, which minimizes power loss and improves overall efficiency in electronic circuits.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is suitable for high-frequency applications, ensuring quick response times and reduced switching losses.
  • Compact Design: The small surface-mount package allows for a compact design, enabling its use in space-constrained applications without sacrificing performance.
  • High Reliability: ON Semiconductor's commitment to quality ensures that the 3LN01S-TL-E is a reliable component for long-term use in critical applications.
  • Low Gate Charge: The device has a low gate charge, which reduces the power required to drive the gate, thus enhancing the overall efficiency of the system.

Applications

The versatility of the 3LN01S-TL-E MOSFET makes it suitable for a variety of applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • LED lighting solutions
  • Automotive applications
  • Portable electronic devices

Specifications

Parameter Value Package SOT-428 Channel Type N-Channel Drain-Source Voltage (V<sub>DS) 100 V Continuous Drain Current (I<sub>D) 1 A Power Dissipation (P<sub>D) 1.25 W R<sub>DS(on) 0.8 Ω

In conclusion, the ON Semiconductor 3LN01S-TL-E MOSFET is a high-quality component that combines efficiency, reliability, and compactness, making it a top choice for designers and engineers seeking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6255 $59.4225
230+ $0.5133 $118.0590
350+ $0.4973 $174.0550
480+ $0.4813 $231.0240
625+ $0.4652 $290.7500
835+ $0.4171 $348.2785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,500 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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