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5407NG

Part No 5407NG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 38A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 7.6A (Ta), 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1000pF @ 32V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 075856-5407NG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 5407NG CAD Model

Description

The 5407NG is a high-performance N-channel MOSFET produced by ON Semiconductor, a leading supplier in the semiconductor industry. This device is particularly designed to meet the rigorous demands of power switching applications, offering efficient power management and high reliability for a wide range of products.

Key Features

  • High Current Capacity: The 5407NG is capable of handling continuous drain currents, making it suitable for high-power applications.
  • Low On-Resistance: With its low R<sub>DS(on), the MOSFET ensures minimal power loss and heat generation, enhancing overall efficiency.
  • Fast Switching Speed: The device's rapid switching capabilities enable efficient operation at high frequencies, which is crucial for power converters and inverters.
  • Robust Thermal Performance: The 5407NG is designed with an optimal thermal footprint, ensuring reliable performance even under high temperature conditions.

Applications

The versatility of the 5407NG MOSFET allows it to be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Drives
  • Battery Management Systems
  • Power Management for Consumer Electronics

Product Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 100V Continuous Drain Current (I<sub>D) High Power Dissipation (P<sub>D) Optimized R<sub>DS(on) Low Operating Temperature -55°C to 150°C

In conclusion, the ON Semiconductor 5407NG N-channel MOSFET is an efficient, reliable solution for designers seeking to enhance power management in their applications. Its robust design and superior electrical characteristics make it a go-to choice for a multitude of power switching tasks.

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