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BC847BTT1G

Part No BC847BTT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.1A SC75-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V
Maximum Power Dissipation 225mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-75, SOT-416
Win Source Part Number 1022449-BC847BTT1G
Family Name BC847BT
Introduction Date June 12, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2023
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BC847BTT1G CAD Model

Description

The BC847BTT1G is a high-quality NPN bipolar (BJT) transistor manufactured by ON Semiconductor, a leader in energy-efficient innovations. Designed for general-purpose switching and amplification applications, this transistor is a fundamental component for a wide array of electronic circuits. The BC847BTT1G offers a perfect blend of affordability and performance, making it a go-to choice for both hobbyists and professionals.

Key Features

  • Transistor Type: NPN - This allows for high current gain and the ability to switch and amplify electronic signals efficiently.
  • Package / Case: SOT-523 - A compact surface-mount package that saves space on printed circuit boards (PCBs) while still offering reliable performance.
  • Collector-Emitter Voltage (VCEO): 45V - Provides ample voltage range for various applications, ensuring stable operation.
  • Collector-Base Voltage (VCBO): 50V - Ensures a robust performance even under high-voltage conditions.
  • Emitter-Base Voltage (VEBO): 6V - Suitable for a variety of circuits without the risk of breakdown.
  • Continuous Collector Current (IC): 100mA - Capable of handling a moderate amount of current for signal processing and control tasks.
  • DC Current Gain (hFE): 200 to 450 - High current gain allows for efficient current amplification in electronic circuits.
  • Power Dissipation (Pd): 250mW - Adequate power handling for general-purpose applications.
  • Operating Temperature Range: -55°C to +150°C - Guarantees reliable performance over a wide range of environmental conditions.

Applications

The BC847BTT1G is versatile and can be used in various electronic applications such as:

  • Signal amplification in audio, radio-frequency (RF), and analog circuits.
  • Switching operations in digital logic circuits.
  • Driver stages in high-power amplifiers.
  • Control systems and sensor interfacing.

With its excellent performance characteristics and compact form factor, the BC847BTT1G from ON Semiconductor is a reliable choice for designers and engineers looking to create efficient and durable electronic solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,630+ $0.0307 $50.0410
3,475+ $0.0288 $100.0800
5,400+ $0.0278 $150.1200
7,725+ $0.0259 $200.0775
10,045+ $0.0249 $250.1205
12,555+ $0.0239 $300.0645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 300,500 pieces
MOQ: 1630 pcs
Order Increment : 1 pcs
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