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BC847BWT1G

Part No BC847BWT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.1A SOT-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V
Maximum Power Dissipation 150mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Win Source Part Number 011120-BC847BWT1G
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian BC847BWT1G CAD Model

Description

ON Semiconductor BC847BWT1G Bipolar Transistor

The BC847BWT1G is a high-performance NPN bipolar (BJT) transistor manufactured by ON Semiconductor, designed for general-purpose switching and amplification applications. This small-signal transistor is a fundamental component for a wide range of electronic circuits, offering a blend of reliability and efficiency in a compact SOT-323 package.

Key Features

  • Transistor Type: NPN - This transistor allows for efficient current amplification when a small base current controls a larger collector current.
  • Package: SOT-323 - The surface-mount package is ideal for automated assembly processes and space-constrained applications.
  • Collector-Emitter Voltage (Vceo): 45V - This rating ensures the transistor can handle moderate voltage applications without breakdown.
  • Collector Current (Ic): 100mA - The transistor can support a continuous collector current up to 100mA, suitable for a variety of low-power tasks.
  • DC Current Gain (hFE): 200 to 450 - A measure of the transistor's ability to amplify the current, with a high hFE indicating more efficient current amplification.
  • Power Dissipation (Pd): 250mW - The maximum power the transistor can dissipate without exceeding its maximum operating temperature.
  • Operating Temperature Range: -55°C to +150°C - The BC847BWT1G can operate effectively over a wide temperature range, making it suitable for various environmental conditions.

Applications

The ON Semiconductor BC847BWT1G is versatile and can be used in numerous applications such as:

  • Signal processing
  • Low-noise audio amplifiers
  • Driver stages in hi-fi amplifiers and television circuits
  • Switching loads in consumer electronics
  • Voltage regulation circuits
  • Interface circuits between microcontrollers and peripherals

With its robust performance characteristics and small footprint, the BC847BWT1G is a reliable choice for designers and engineers looking to create compact, efficient, and high-performing electronic designs. ON Semiconductor's commitment to quality ensures that the BC847BWT1G meets the stringent requirements of modern electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
635+ $0.0789 $50.1015
1,550+ $0.0647 $100.2850
2,395+ $0.0627 $150.1665
3,295+ $0.0607 $200.0065
4,260+ $0.0587 $250.0620
5,705+ $0.0526 $300.0830
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 635 pcs
Order Increment : 1 pcs
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