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BC847CWT1G

Part No BC847CWT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.1A SOT-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 150mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Win Source Part Number 011127-BC847CWT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BC847CWT1G CAD Model

Description

ON Semiconductor BC847CWT1G NPN Bipolar Transistor

The ON Semiconductor BC847CWT1G is a high-performance NPN bipolar (BJT) transistor that offers a perfect balance of low voltage and high current capabilities. This small-signal transistor is designed for general-purpose and amplifier applications, making it a versatile component for a wide range of electronic circuits. The BC847CWT1G is housed in a compact SOT-323 package, which is ideal for space-constrained applications.

Key Features

  • Transistor Type: NPN - This transistor type is widely used for amplification and switching purposes.
  • Current - Collector (Ic) (Max): 100mA - The BC847CWT1G can handle a collector current up to 100mA, making it suitable for moderate current applications.
  • Voltage - Collector Emitter Breakdown (Max): 45V - With a collector-emitter breakdown voltage of 45V, this transistor can be used in circuits with higher voltage requirements.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V - The transistor provides a high current gain, ensuring efficient current amplification.
  • Power - Max: 250mW - It has a maximum power dissipation of 250mW, which is sufficient for various low-power applications.
  • Frequency - Transition: 100MHz - The transition frequency of 100MHz makes it suitable for applications that require fast switching.

Applications

The ON Semiconductor BC847CWT1G is ideal for use in:

  • General-purpose switching and amplification
  • Audio amplifiers
  • Signal processing
  • Driver stages in Hi-Fi amplifiers and television circuits
  • Portable battery-powered devices

Reliability and Quality

ON Semiconductor is known for its commitment to quality, and the BC847CWT1G is no exception. It is designed to meet the stringent requirements of the industrial and consumer markets. The device is also RoHS compliant, ensuring it meets the latest environmental standards and is free from hazardous substances.

Overall, the BC847CWT1G from ON Semiconductor is a reliable and efficient NPN transistor that offers excellent performance for a wide range of electronic applications, from simple switches to complex amplification systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,895+ $0.0264 $50.0280
4,610+ $0.0217 $100.0370
7,145+ $0.0210 $150.0450
9,855+ $0.0203 $200.0565
12,760+ $0.0196 $250.0960
17,050+ $0.0176 $300.0800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100,000 pieces
MOQ: 1895 pcs
Order Increment : 1 pcs
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