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BC857CWT1G

Part No BC857CWT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Trans GP BJT PNP 45V 0.1A 150mW 3-Pin SC-70 T/R / TRANS PNP 45V 0.1A SOT-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 150mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-3 (SOT323)
Win Source Part Number 011165-BC857CWT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name BC857CW
Introduction Date February 28, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian BC857CWT1G CAD Model

Description

ON Semiconductor BC857CWT1G PNP Transistor

The BC857CWT1G is a high-quality PNP bipolar junction transistor (BJT) from ON Semiconductor, a leading provider of semiconductor-based solutions. This transistor is designed for general-purpose switching and amplification applications, making it a versatile component for a multitude of electronic circuits. With its compact SOT-323 package, the BC857CWT1G is ideal for space-constrained applications where small size and low weight are critical.

Key Features:

  • PNP Bipolar Technology: The BC857CWT1G utilizes PNP transistor technology, which is known for its efficient current control and is widely used in signal amplification and power regulation circuits.
  • High Current Gain: This transistor offers a high current gain (hFE), typically around 420, providing robust amplification capabilities for various electronic signals.
  • Low Voltage Operation: With a collector-emitter voltage (VCEO) of -45V, the BC857CWT1G can operate effectively in low-voltage circuits, making it suitable for battery-operated devices and portable electronics.
  • Power Dissipation: The device has a moderate power dissipation of 250mW, allowing it to handle a reasonable amount of power without the need for additional cooling in most applications.
  • Compact SOT-323 Package: The small surface-mount package allows for efficient use of PCB space and is easy to integrate into various circuit designs.

Applications:

The BC857CWT1G is an excellent choice for a range of electronic applications, including but not limited to:

  • Signal amplification in audio devices
  • Power management in portable electronics
  • Switching operations in digital circuits
  • Driver stages in amplifiers
  • Low-power consumption applications

ON Semiconductor's BC857CWT1G is a reliable and efficient PNP transistor that offers great performance in a tiny package. Whether you're designing a new circuit or replacing an existing component, the BC857CWT1G provides the functionality and dependability required for a wide array of electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2911 $50.9425
420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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