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BC859CLT1G

Part No BC859CLT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 0.1A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 650mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 420 @ 2mA, 5V
Maximum Power Dissipation 300mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 1022531-BC859CLT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BC859CLT1G CAD Model

Description

ON Semiconductor BC859CLT1G PNP Transistor

The ON Semiconductor BC859CLT1G is a high-quality PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This versatile component is a part of ON Semiconductor’s extensive range of semiconductor devices, known for their reliability and performance. The BC859CLT1G is particularly suitable for situations requiring low noise and good hFE linearity, making it an excellent choice for audio amplifiers, signal processing, and other analog circuits.

The BC859CLT1G offers a collector-emitter voltage (VCEO) of -30V and a collector current of up to -100mA, providing ample headroom for a variety of electronic designs. Additionally, the device features a collector-base voltage (VCBO) of -30V and an emitter-base voltage (VEBO) of -5V. The power dissipation is rated at 250mW, which allows for sufficient power handling within a compact SOT-23 package.

One of the key attributes of the BC859CLT1G is its low noise figure, which is essential for applications where signal integrity is paramount. This, combined with its excellent current gain characteristics, ensures a clean and stable amplification, making it a preferred choice for designers working on high-fidelity audio applications or sensitive analog signal processing.

Furthermore, the BC859CLT1G boasts a high transition frequency (fT) of 100MHz, enabling its use in higher speed switching applications and ensuring that it can handle a broad spectrum of frequencies without performance degradation. This feature is particularly beneficial for RF and wireless applications where rapid switching is a necessity.

The device is also characterized by its low saturation voltage, which enhances overall efficiency by minimizing voltage drops across the transistor when in the on-state. This results in lower power losses and better energy savings, which is crucial for battery-operated devices and power-sensitive applications.

ON Semiconductor has designed the BC859CLT1G with a focus on environmental sustainability, as it is compliant with the RoHS directive, ensuring that it is free from hazardous substances. Its SOT-23 package is not only space-efficient but also allows for easy integration into a wide range of electronic circuits, providing designers with flexibility and convenience during the PCB layout process.

In summary, the BC859CLT1G from ON Semiconductor is a high-performance PNP transistor that offers low noise, high gain, and efficient switching capabilities, making it an excellent choice for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,385+ $0.0243 $57.9555
5,785+ $0.0200 $115.7000
8,985+ $0.0193 $173.4105
12,350+ $0.0187 $230.9450
15,925+ $0.0182 $289.8350
21,430+ $0.0162 $347.1660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,675 pieces
MOQ: 2385 pcs
Order Increment : 1 pcs
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