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BD536J

Part No BD536J
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 8A TO-220
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Features Bipolar (BJT) Transistor PNP 60 V 8 A 12MHz 50 W Through Hole TO-220-3
Manufacturer ON Semiconductor
Package Bulk
Part Status Obsolete
Operating Temperature Range 150°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220-3
Family Name BD536
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 1200
Popularity High
Supply and Demand Status Balance
Win Source Part Number 913203-BD536J
Ultra Librarian 3D Model Ultra Librarian BD536J CAD Model

Description

The BD536J from ON Semiconductor is a high-performance power transistor designed to meet the rigorous demands of modern electronic circuits. This device is a PNP bipolar junction transistor (BJT) that is well-suited for use in power amplification and switching applications. Its robust design ensures reliability and efficiency, making it an ideal choice for a wide range of industrial, commercial, and consumer products.

Key Features

  • High Current Capacity: The BD536J is capable of handling significant current levels, which is essential for power regulation in electronic circuits.
  • Low Saturation Voltage: This transistor has a low collector-emitter saturation voltage, which translates to reduced power loss and improved efficiency during operation.
  • Complementary NPN Type Available: ON Semiconductor offers a complementary NPN type transistor, allowing for flexibility in designing push-pull amplifier configurations.
  • Wide Operating Temperature Range: The BD536J can operate effectively across a broad temperature range, ensuring consistent performance under varying environmental conditions.

Applications

The BD536J transistor is versatile and can be used in a variety of applications, such as:

  • Power regulators and converters
  • Audio amplifiers
  • Switching circuits
  • Motor control systems
  • Signal processing

Technical Specifications

Parameter Value Collector-Emitter Voltage (VCEO) 80V Collector Current (IC) 8A Power Dissipation (PD) 65W Operating Temperature Range (TJ) -55°C to +150°C

With its robust construction and excellent electrical characteristics, the BD536J from ON Semiconductor is a reliable component for designers and engineers looking to optimize their power management and amplification systems. Its proven performance and ON Semiconductor's commitment to quality make it a preferred choice for both new designs and replacements in existing applications.

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