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BUV22G

Part No BUV22G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 250V 40A TO-3 / Trans GP BJT NPN 250V 40A 250000mW 3-Pin(2+Tab) TO-204 Tray
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Series SWITCHMODE
Packaging Tray
Transistor Type NPN
Current - Collector (Ic) (Maximum) 40A
Voltage - Collector Emitter Breakdown (Maximum) 250V
Vce Saturation (Maximum) @ Ib, Ic 1.5V @ 2.5A, 20A
Current - Collector Cutoff (Maximum) 3mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 20 @ 10A, 4V
Power - Max 250W
Frequency - Transition 8MHz
Operating Temperature Range -65°C ~ 200°C (TJ)
Mounting Style Through Hole
Package TO-204AE
Manufacturer Package TO-3
Win Source Part Number 770693-BUV22G
Popularity Medium
Supply and Demand Status Limited
Family Name BUV22
Introduction Date August 31, 1995
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian BUV22G CAD Model

Description

Introducing the BUV22G High Power NPN Transistor by ON Semiconductor

ON Semiconductor's BUV22G is a high-performance NPN bipolar junction transistor (BJT) designed to meet the rigorous demands of power switching applications. This robust semiconductor device is ideal for a wide range of uses, including power regulation, amplification, and switching in commercial, industrial, and automotive environments.

The BUV22G is characterized by its high current capacity and fast switching speeds, making it a reliable component in power electronic circuits. With a collector-emitter voltage (V<sub>CEO) of 450V and collector current (I<sub>C) capability of up to 15A, it can handle significant power levels. Moreover, its power dissipation (P<sub>D) is rated at 130W, ensuring that it can sustain high power without compromise to performance or longevity.

Featuring a TO-220 package, the BUV22G transistor is designed for easy mounting onto a heat sink, which is essential for maintaining thermal stability during operation. Its robust package ensures that it can withstand mechanical stress and offers excellent isolation from other components on a printed circuit board (PCB).

With a minimum h<sub>FE (DC current gain) of 15 at I<sub>C = 5A, the BUV22G provides consistent amplification across a range of currents, ensuring a reliable and predictable performance in a circuit. The device also features a low collector-emitter saturation voltage (V<sub>CE(sat)), which translates to reduced power losses during operation, making it an energy-efficient choice for designers.

ON Semiconductor's commitment to quality is evident in the BUV22G's design, which includes built-in features for safe operation under extreme conditions. This includes a ruggedized design capable of withstanding high energy pulses in the avalanche and commutation modes, which is critical for applications that may experience unexpected voltage transients.

In summary, the BUV22G from ON Semiconductor is a powerful, reliable, and efficient NPN transistor that offers exceptional performance for high-power applications. Its thermal and electrical characteristics make it a go-to choice for engineers looking for a component that can deliver in challenging conditions.

For detailed specifications and application notes, engineers and designers are encouraged to consult the BUV22G datasheet, available through ON Semiconductor's official website or authorized distributors.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.2718 $55.6308
14+ $7.6076 $106.5064
21+ $7.3699 $154.7679
29+ $7.1321 $206.8309
37+ $6.8944 $255.0928
49+ $6.1812 $302.8788
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,300 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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