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DTC123JET1

Part No DTC123JET1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SC75
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 200 mW
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package SC-75, SOT-416
Base Product Number DTC123
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 587579-DTC123JET1
Ultra Librarian 3D Model Ultra Librarian DTC123JET1 CAD Model

Description

The DTC123JET1 is a high-quality NPN bipolar digital transistor from ON Semiconductor, a leading name in the semiconductor industry. This product is designed for use in applications that require a combination of a digital input signal and a high current gain, providing efficient and reliable performance in a compact package.

Key Features

  • Integrated Bias Resistor: The DTC123JET1 comes with an integrated 10 kΩ bias resistor, which simplifies circuit design by reducing component count and saving board space.
  • High Current Gain: This transistor features a high DC current gain (hFE), making it suitable for amplifying low-level signals to drive heavier loads.
  • Low VCE(sat): It offers low collector-emitter saturation voltage, ensuring lower power dissipation and improved efficiency in operation.
  • Surface-Mount Package: Encased in a small SOT-523 package, the DTC123JET1 is ideal for space-constrained applications, allowing for high-density PCB layouts.
  • Robust Performance: ON Semiconductor's commitment to quality ensures that this digital transistor performs robustly across a wide range of temperatures and conditions.

Applications

The versatility of the DTC123JET1 allows it to be utilized in a wide array of applications, including but not limited to:

  • Inverter circuits
  • Interface circuits
  • Driver circuits
  • Signal processing
  • Switching applications

Technical Specifications

Parameter Value
Collector-Emitter Voltage (VCEO) 50V
Collector Current (IC) 100mA
Power Dissipation (PD) 200mW
Operating Temperature Range -55°C to +150°C

Whether you're designing consumer electronics, automotive systems, or industrial controls, the DTC123JET1 by ON Semiconductor is an excellent choice for reliable switching and amplification needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,875+ $0.0309 $57.9375
4,550+ $0.0254 $115.5700
7,045+ $0.0246 $173.3070
9,710+ $0.0238 $231.0980
12,565+ $0.0230 $288.9950
16,855+ $0.0206 $347.2130
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,750 pieces
MOQ: 1875 pcs
Order Increment : 1 pcs
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