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Same model may have multiple batches, images only for reference.
DTD113E ON Semiconductor – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

DTD113E

Part No DTD113E
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 350 mW Through Hole TO-92 (TO-226)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Manufacturer onsemi
Packaging Bulk
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 350 mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92 (TO-226)
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1478208-DTD113E
Ultra Librarian 3D Model Ultra Librarian DTD113E CAD Model

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