The ON Semiconductor FCH099N65S3-F155 is a high-performance Power MOSFET designed to meet the rigorous demands of power conversion and switching applications. This device is part of the company's advanced high-voltage MOSFET portfolio, which is renowned for delivering efficiency, reliability, and thermal performance.

Key Features:

• High Voltage Capability: With a drain-source voltage (V<sub>DS) of 650V, this MOSFET can handle high voltage applications, making it ideal for power supplies, converters, and inverters.
• Low On-Resistance: The FCH099N65S3-F155 features a low on-resistance (R<sub>DS(on)) of 99 mΩ, which minimizes conduction losses and improves overall efficiency.
• High Continuous Current: It supports a continuous drain current (I<sub>D) of up to 80A at 25°C, allowing it to drive high current loads with ease.
• Fast Switching Speed: The device boasts a fast switching speed that enhances performance in high-frequency circuits and reduces switching losses.
• Robust Body Diode: The MOSFET comes with a robust body diode with low reverse recovery charge (Q<sub>rr), which is critical for hard-switching applications.

Applications:

• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Motor Drives
• Power Factor Correction (PFC) Circuits
• DC-DC Converters

Package and Reliability:

The FCH099N65S3-F155 comes in a TO-247 package, which is known for its high power dissipation and ease of mounting. Moreover, the package is designed to withstand high thermal cycling performance, ensuring long-term reliability and stability in a variety of environmental conditions.

Quality and Performance:

ON Semiconductor's commitment to quality ensures that the FCH099N65S3-F155 MOSFET meets stringent standards for performance and durability. With its combination of high voltage capability, low on-resistance, and fast switching speeds, this MOSFET is an excellent choice for designers looking to improve system efficiency and robustness in their power conversion applications.