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FCMT099N65S3

Part No FCMT099N65S3
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 30A POWER88 / N-Channel 650 V 30A (Tc) 227W (Tc) Surface Mount Power88
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2270 pF @ 400 V
Power Dissipation (Max) 227W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package Power88
Case / Package 4-PowerTSFN
Base Product Number FCMT099
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number ,488-FCMT099N65S3CT,488-FCMT099N65S3TR,FCMT099N65S3-ND,488-FCMT099N65S3DKR
Standard Package 3,000
Win Source Part Number 1324729-FCMT099N65S3
Ultra Librarian 3D Model Ultra Librarian FCMT099N65S3 CAD Model

Description

ON Semiconductor FCMT099N65S3 Field-Effect Transistor Overview

The ON Semiconductor FCMT099N65S3 is a high-performance silicon carbide (SiC) N-Channel MOSFET designed to deliver efficient power conversion with robustness and reliability for demanding applications. This state-of-the-art transistor is a part of ON Semiconductor's advanced SiC power solutions, providing exceptional efficiency and power density benefits over traditional silicon-based MOSFETs.

Key Features

  • High Blocking Voltage: With a 650V drain-to-source breakdown voltage (V<sub>DS), the FCMT099N65S3 is well-suited for high-voltage power applications, enabling designers to achieve efficient power conversion in compact form factors.
  • Low On-Resistance: The device boasts an ultra-low on-resistance (R<sub>DS(on)) of just 99 mΩ, which minimizes conduction losses and improves overall efficiency, particularly critical in high-current scenarios.
  • Fast Switching Speed: The fast switching capability of the FCMT099N65S3 enhances performance in applications requiring high-frequency operation, such as switch-mode power supplies and inverters.
  • Reduced Switching Losses: The inherent characteristics of SiC allow for reduced switching losses, making this MOSFET ideal for high-efficiency power systems.
  • Enhanced Thermal Performance: The device's excellent thermal conductivity ensures reliable operation even under high-temperature conditions, extending the lifespan of the product.

Applications

The FCMT099N65S3 is versatile and can be used in a variety of applications, including:

  • Power supply units (PSUs)
  • Electric vehicle (EV) chargers
  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • Industrial motor drives

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the FCMT099N65S3 is no exception. It is manufactured to meet the highest standards, ensuring reliable performance even in the most challenging conditions. This MOSFET is a testament to ON Semiconductor's dedication to providing innovative and durable power solutions for a wide range of industrial and commercial applications.

Environmental Impact

With the growing emphasis on energy efficiency and sustainability, the FCMT099N65S3 contributes to greener solutions by enabling higher efficiency levels and reduced power losses in electronic systems. This not only leads to energy savings but also helps in reducing the environmental impact of electronic devices and systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9319 $57.9570
65+ $1.5852 $103.0380
100+ $1.5357 $153.5700
135+ $1.4861 $200.6235
175+ $1.4366 $251.4050
235+ $1.2880 $302.6800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,860 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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