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FDB86563-F085

Part No FDB86563-F085
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 110A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 28 Weeks
Features N-Channel 60 V 110A (Tc) 333W (Tc) Surface Mount D²PAK
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Package Reel - TR
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Surface Mount
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package D2PAK
Family Name FDB86563
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number FDB86563-F085CT, FDB86563-F085DKR, FDB86563-F085TR, FDB86563_F085DKR-ND, FDB86563_F085DKR, FDB86563_F085CT, FDB86563_F085, FDB86563_F085TR-ND, FDB86563_F085TR, FDB86563_F085CT-ND
Quantity per package 800
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 871588-FDB86563-F085
Ultra Librarian 3D Model Ultra Librarian FDB86563-F085 CAD Model

Description

Introducing the FDB86563-F085 PowerTrench® MOSFET from ON Semiconductor

The FDB86563-F085 is a state-of-the-art PowerTrench® MOSFET brought to you by ON Semiconductor, a renowned leader in power management technology. This device is designed specifically for power supply and power conversion applications in computing, consumer electronics, and industrial sectors. With its advanced features and robust performance, the FDB86563-F085 is an ideal solution for high-efficiency energy management.

Key Features of the FDB86563-F085

  • Low Gate Charge (Qg): Reduced gate charge enables faster switching, improving the efficiency of your power conversion circuits.
  • Low Crss (Reverse Transfer Capacitance): Minimizes cross-talk between switches and reduces noise, enhancing the performance of your applications.
  • High Power and Current Handling: With a continuous drain current of 11 A and power dissipation of 48 W, this MOSFET can handle demanding power requirements.
  • High Avalanche Energy Rating (Eas): Ensures reliability and stability under conditions where the MOSFET is subject to high energy pulses.
  • Optimized for Fast Switching: The FDB86563-F085's design is optimized for fast switching applications, making it suitable for high-frequency power converters.

Applications

The FDB86563-F085 is versatile and can be used in a variety of applications, including:

  • Synchronous rectification for AC-DC and DC-DC converters
  • Point of Load (POL) modules
  • Switching power supplies
  • Motor drives
  • Battery management systems

Technical Specifications

Some of the technical specifications of the FDB86563-F085 include:

  • Drain-to-Source Voltage (Vdss): 30 V
  • Gate-to-Source Voltage (Vgs): ±20 V
  • Continuous Drain Current (Id) @ 25°C: 11 A
  • Total Gate Charge (Qg) @ Vgs: 17 nC
  • Power Dissipation (Pd) @ 25°C: 48 W
  • Operating and Storage Temperature Range: -55°C to +150°C

Quality and Environmental Compliance

ON Semiconductor is committed to providing environmentally friendly solutions. The FDB86563-F085 is manufactured with the environment in mind, adhering to the strictest quality standards and ensuring compliance with international environmental regulations.

With the FDB86563-F085, ON Semiconductor continues to deliver high-performance, energy-efficient solutions for today's electronic power management needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $2.9721 $50.5257
42+ $2.4386 $102.4212
64+ $2.3624 $151.1936
88+ $2.2862 $201.1856
114+ $2.2100 $251.9400
152+ $1.9814 $301.1728
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,880 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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