ON Semiconductor FDMA910PZ P-Channel PowerTrench® MOSFET

The FDMA910PZ is a high-performance P-Channel PowerTrench® MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This power MOSFET is a critical component in a wide range of electronic applications, offering designers a combination of low on-resistance and minimal gate charge to optimize power efficiency and performance.

Key Features

• Low On-Resistance: The FDMA910PZ boasts an extremely low on-resistance (R_DS(on)), which reduces conduction losses and improves overall efficiency in electronic circuits.
• High Power Dissipation: With a power dissipation rating of 2.5W, this MOSFET can handle significant power, making it suitable for high-power applications.
• Advanced PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process technology enhances the device's performance by optimizing cell density, which translates into lower R_DS(on) and reduced gate charge (Q_g).
• Low Gate Charge: The reduced gate charge ensures faster switching speeds, which is essential for applications that require high-frequency operation.
• RoHS Compliant: The device is compliant with the RoHS directive, which means it is free from hazardous substances and suitable for use in environmentally sensitive applications.

Applications

The FDMA910PZ is versatile and can be used in various applications, including:

• Power management systems
• Load switches
• Battery management
• DC-DC converters
• Portable devices

Specifications

The FDMA910PZ operates with a drain-source voltage (V_DS) of -30V and a continuous drain current (I_D) of -13A at 25°C. Its threshold voltage (V_GS(th)) ranges from -0.4V to -1.0V, allowing for low-voltage operation. The device is housed in a compact 8-Pin Power 56 package, which is optimized for minimal footprint and easy integration into various circuit designs.

With its robust design and energy-efficient operation, the FDMA910PZ from ON Semiconductor is an excellent choice for engineers looking to enhance the performance and reliability of their power-sensitive applications.