ON Semiconductor FDMC6686P P-Channel PowerTrench® MOSFET

The ON Semiconductor FDMC6686P is a high-performance P-Channel PowerTrench® MOSFET designed to deliver efficient power management and conversion in a compact package. This MOSFET is a preferred choice for engineers looking to achieve low conduction losses without sacrificing switching performance in their circuit designs.

With an emphasis on miniaturization, the FDMC6686P comes in a space-saving 5x6 mm² MLP package, which is ideal for applications where board space is at a premium. The PowerTrench® technology employed in this MOSFET allows for extremely low on-resistance (R<sub>DS(on)) and gate charge (Q<sub>g), leading to reduced power dissipation and improved overall efficiency.

Key Features:

• Drain-Source Voltage (V<sub>DSS): -30V
• Continuous Drain Current (I<sub>D): -13A
• Power Dissipation (P<sub>D): 2.5W
• R<sub>DS(on) at V<sub>GS = -10V: 8.5mΩ
• R<sub>DS(on) at V<sub>GS = -4.5V: 13.5mΩ
• Low gate charge (Q<sub>g)
• High performance trench technology for extremely low R<sub>DS(on)
• RoHS compliant

The FDMC6686P is also characterized by a low threshold voltage, making it suitable for low voltage applications. Its fast switching characteristics make it an excellent choice for high-frequency power switching applications such as DC/DC converters, power supplies, and load switches.

Applications that can benefit from the FDMC6686P include:

• Power management for portable devices
• DC/DC conversion in computing and consumer electronics
• Load switching in telecom and industrial systems
• Battery management systems
• Reverse polarity protection circuits

By integrating the FDMC6686P into your design, you can expect a reduction in conduction losses, enhanced thermal performance, and reliable operation under a wide range of conditions. ON Semiconductor's commitment to quality ensures that this MOSFET meets the stringent requirements of modern electronic devices, providing a robust and energy-efficient solution for power management challenges.