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FDMD8530

Part No FDMD8530
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET 2N-CH 30V 35A / Mosfet Array 30V 35A 2.2W Surface Mount Power56
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr onsemi
Series PowerTrench®
Package Tape & Reel
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 35A
Rds On (Max) @ Id, Vgs 1.25mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 149nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 10395pF @ 15V
Power - Max 2.2W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package Power56
Base Product Number FDMD85
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355619-FDMD8530
Ultra Librarian 3D Model Ultra Librarian FDMD8530 CAD Model

Description

ON Semiconductor FDMD8530 Dual N-Channel PowerTrench® MOSFET

The FDMD8530 from ON Semiconductor is a high-performance Dual N-Channel PowerTrench® MOSFET designed to deliver the efficiency and power handling capabilities required for a wide range of power management applications. This power MOSFET features advanced technology that optimizes it for low on-resistance and minimal gate charge, resulting in a highly efficient, fast-switching device.

With its compact and robust package, the FDMD8530 is ideal for space-constrained environments, offering a powerful solution without sacrificing performance. This MOSFET is commonly used in DC-DC conversion, power management for computing and telecommunications, motor control circuits, and other applications where efficient power conversion is critical.

Key Features:

  • Low On-Resistance: The device boasts an exceptionally low on-resistance, which translates to reduced losses during operation and enhances overall system efficiency.
  • High Current Capability: The FDMD8530 is capable of handling high continuous drain currents, making it suitable for demanding applications.
  • Low Gate Charge: The low gate charge characteristic of this MOSFET allows for faster switching speeds, which is beneficial in high-frequency power switching applications.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process technology is engineered to minimize on-state resistance while maintaining superior switching performance, which is vital for power efficiency.
  • Dual N-Channel Configuration: The dual N-Channel configuration enables the design of more compact circuit layouts, saving space and potentially reducing costs.

Electrical Characteristics:

The FDMD8530 operates over a wide range of voltages and temperatures, ensuring reliable performance under various conditions. It features a continuous drain current (ID) of up to 15A per channel, with a drain-source voltage (VDS) of 30V. The threshold voltage (VGS(th)) is specified to ensure consistent turn-on characteristics.

ON Semiconductor has designed the FDMD8530 with the modern electronic environment in mind, ensuring that this MOSFET will meet the needs of engineers and designers looking for a high-efficiency, reliable power switching solution.

For detailed specifications and application notes, designers are encouraged to consult the official datasheets and technical documentation provided by ON Semiconductor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3284 $51.2248
53+ $1.9105 $101.2565
82+ $1.8508 $151.7656
112+ $1.7911 $200.6032
145+ $1.7314 $251.0530
194+ $1.5523 $301.1462
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,800 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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