The ON Semiconductor FDMS007N08LC is a high-performance N-Channel PowerTrench® MOSFET designed for a wide range of applications, including power supplies, motor drives, and other power-intensive applications. This MOSFET utilizes ON Semiconductor's advanced PowerTrench technology to deliver superior performance with a focus on energy efficiency and reliability.
Key Features
- Low On-Resistance: The FDMS007N08LC features an extremely low on-resistance (R<sub>DS(on)) of just 0.73 mΩ at V<sub>GS = 10 V, which enhances its efficiency by minimizing conduction losses.
- High Continuous Drain Current: It can handle a high continuous drain current (I<sub>D) of up to 200 A, making it suitable for high power applications.
- High Voltage Rating: With a drain-to-source voltage (V<sub>DSS) of 80 V, this MOSFET can be used in circuits with higher voltage requirements.
- Low Gate Charge: A low total gate charge (Q<sub>g) helps to reduce switching losses, thereby improving overall efficiency in high-frequency switching applications.
- PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench process optimizes the device for low gate charge and capacitance, resulting in reduced switching and conduction losses.
Applications
The versatility of the FDMS007N08LC MOSFET makes it ideal for a variety of applications, including:
- DC/DC converters
- Motor drives
- Power management systems
- AC/DC power supplies
- Automotive power systems
- High-performance computing and server power solutions
Product Summary
Parameter
Value
R<sub>DS(on)
0.73 mΩ
I<sub>D
200 A
V<sub>DSS
80 V
Q<sub>g
Low
In conclusion, the FDMS007N08LC is a robust and efficient solution for designers looking to improve system performance while reducing energy consumption. Its advanced features and ON Semiconductor's commitment to quality make it an excellent choice for demanding power applications.