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FDMS10C4D2N

Part No FDMS10C4D2N
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 17A 8PQFN
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 49 Weeks
Features N-Channel 100 V 17A (Tc) 125W (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer ON Semiconductor
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerTDFN
Case / Package 8-PQFN (5x6)
Family Name FDMS10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number FDMS10C4D2NOSDKR, FDMS10C4D2NOSCT, FDMS10C4D2NOSTR, FDMS10C4D2N-ND
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 919033-FDMS10C4D2N
Ultra Librarian 3D Model Ultra Librarian FDMS10C4D2N CAD Model

Description

ON Semiconductor FDMS10C4D2N PowerTrench® MOSFET

The FDMS10C4D2N from ON Semiconductor is a state-of-the-art PowerTrench® MOSFET designed to deliver high efficiency and power density for a wide range of applications. This advanced MOSFET technology is engineered to meet the demanding requirements of modern electronic devices, offering superior switching performance and low on-resistance.

With its compact 8x8 mm² PQFN package, the FDMS10C4D2N is perfectly suited for space-constrained applications. This package not only allows for a smaller footprint on the PCB but also provides excellent thermal performance, ensuring the device operates reliably even under high power conditions.

The FDMS10C4D2N boasts an impressive continuous drain current (I<sub>D) of 119A at 25°C, making it capable of handling high current loads with ease. Its low on-resistance (R<sub>DS(on)) of just 2.4 mΩ minimizes power loss and improves overall efficiency, which is critical for energy-sensitive designs.

This MOSFET also features a maximum drain-source voltage (V<sub>DSS) of 40V, providing a good safety margin for most low to medium voltage applications. Its fast switching speed is facilitated by a low gate charge (Q<sub>g), which enhances the performance in high-frequency circuits such as DC-DC converters, motor drives, and power management systems.

ON Semiconductor's FDMS10C4D2N is designed with robustness in mind. It includes an integrated ESD protection diode, which safeguards the device against electrostatic discharge events, ensuring long-term reliability and stability in the field. Additionally, the MOSFET is 100% Rg and UIS tested, guaranteeing consistent performance across the product range.

Whether it's for power supply applications, computing, consumer electronics, or automotive systems, the FDMS10C4D2N offers designers a powerful and efficient solution. Its combination of high current capability, low on-resistance, and fast switching characteristics make it an ideal choice for enhancing the performance and efficiency of a wide variety of power management tasks.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.0014 $50.0140
25+ $4.1037 $102.5925
38+ $3.9755 $151.0690
52+ $3.8472 $200.0544
68+ $3.7190 $252.8920
90+ $3.3343 $300.0870
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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