The FDP045N10A from ON Semiconductor is a high-performance N-channel, PowerTrench<sup>® MOSFET designed for a wide range of applications requiring high efficiency and power density. This field-effect transistor is a part of ON Semiconductor's advanced line of power MOSFETs which utilize proprietary technology to achieve superior switching performance and low on-state resistance.

Key Features

• Low R<sub>DS(on): The device boasts an exceptionally low drain-to-source on-state resistance of just 4.5 mΩ, contributing to its high efficiency and reduced power losses during operation.
• High Continuous Drain Current: It supports a high continuous drain current (I<sub>D) of up to 80 A, making it suitable for high-power applications.
• High Voltage Capability: With a drain-to-source voltage (V<sub>DSS) of 100 V, the FDP045N10A can handle high voltage applications with ease.
• Fast Switching: The device is optimized for fast switching, enhancing performance in applications where switching speed is critical.
• PowerTrench<sup>® Technology: ON Semiconductor's proprietary PowerTrench<sup>® technology minimizes on-state resistance while maintaining superior switching performance, which is ideal for power conversion applications.

Applications

The FDP045N10A MOSFET is versatile and can be used in a variety of applications, including:

• DC/DC converters
• Synchronous rectification in SMPS (Switched Mode Power Supplies)
• Power management for servers
• Motor drives
• Battery management systems
• High-performance computing

Product Specifications

The FDP045N10A is available in a TO-220 package, which is widely used and easy to integrate into a variety of circuit designs. Its reliability and performance make it an excellent choice for designers looking to improve power efficiency and thermal management in their systems.