ON Semiconductor FDS6982AS_G Dual N-Channel PowerTrench® MOSFET

The ON Semiconductor FDS6982AS_G is a high-performance, dual N-Channel PowerTrench® MOSFET designed for space-constrained power management applications. This advanced power MOSFET is optimized for synchronous rectification in DC/DC converters, which makes it a perfect choice for portable electronics, computing devices, and networking systems where efficiency and compact design are critical.

With an integrated common-drain configuration, the FDS6982AS_G allows for a simplified PCB layout, providing designers with a flexible and straightforward solution for their circuit designs. The device features a low on-resistance (R_DS(on)) of just 8.5 mΩ at V_GS = 10V, which translates to reduced conduction losses and improved overall efficiency in applications.

The PowerTrench® technology employed in the FDS6982AS_G enhances its performance by offering a low gate charge (Q_g), which minimizes switching losses without compromising on the MOSFET's ability to handle high currents. This technology also provides excellent thermal characteristics, ensuring the device operates reliably even under high-power conditions or in temperature-sensitive environments.

Key Features:

• Dual N-Channel 30V, 13A continuous drain current (I_D)
• Low R_DS(on) of 8.5 mΩ at V_GS = 10V
• High power and current handling capability
• PowerTrench® technology for reduced gate charge and low thermal resistance
• Common-drain configuration suitable for high-density PCB layouts
• RoHS compliant and Halogen-free

Safety and environmental concerns are also addressed with the FDS6982AS_G, as it is RoHS compliant and Halogen-free, ensuring that the product meets the latest regulations for hazardous substances. This commitment to environmental stewardship makes it an ideal component for manufacturers looking to create eco-friendly products.

In conclusion, the ON Semiconductor FDS6982AS_G Dual N-Channel PowerTrench® MOSFET is a robust, efficient, and reliable component that offers a blend of performance and compact design. It is suitable for a wide range of high-efficiency applications where space is at a premium and power consumption is of paramount importance.