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FFSP20120A

Part No FFSP20120A
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 1.2KV 20A TO220L
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr ON Semiconductor
Package Tube
Product Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 20A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 20 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 1200 V
Capacitance @ Vr, F 1220pF @ 1V, 100KHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220-2L
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number FFSP20120
Standard Package 800 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 871748-FFSP20120A
Ultra Librarian 3D Model Ultra Librarian FFSP20120A CAD Model

Description

The ON Semiconductor FFSP20120A represents a highly efficient, robust, and versatile silicon carbide (SiC) Schottky diode, designed to meet a wide range of applications. This diode is tailored for systems where improvements in efficiency, reliability, and thermal management are paramount.

Key Features

  • Voltage Rating: The FFSP20120A boasts a 1200V voltage rating, making it suitable for high-voltage applications.
  • Current Capacity: With a forward current rating of 20A, this diode can handle significant power levels, which is essential for power converters and inverters.
  • Low Forward Voltage Drop: The device exhibits a low forward voltage drop, which contributes to its high-efficiency performance by minimizing power losses during operation.
  • No Reverse Recovery Charge: The absence of reverse recovery charge in SiC Schottky diodes reduces switching losses and enhances performance at high switching frequencies.
  • High-Temperature Operation: The FFSP20120A is capable of operating at high junction temperatures, offering a maximum operating temperature of up to 175°C, which is ideal for demanding environments.
  • TO-220-2 Package: The device comes in a TO-220-2 package, known for its ease of installation and good thermal and electrical characteristics.

Applications

ON Semiconductor's FFSP20120A is well-suited for a variety of applications, including but not limited to:

  • Power Supply Units (PSUs)
  • Power Inverters
  • Power Factor Correction (PFC) circuits
  • Switch Mode Power Supplies (SMPS)
  • Electric Vehicle (EV) Charging Stations
  • Renewable Energy Systems

Advantages

The FFSP20120A diode offers numerous advantages to designers and engineers. Its high efficiency and thermal performance reduce the need for extensive heat sinking, which can lead to smaller and lighter system designs. The diode's high-frequency operation capabilities enable compact and power-dense applications, making it an excellent choice for modern power electronic systems.

Overall, the ON Semiconductor FFSP20120A is a state-of-the-art component that delivers superior performance for power conversion and management tasks, ensuring reliability and efficiency in a wide range of electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.8035 $54.1050
70+ $1.4798 $103.5860
105+ $1.4335 $150.5175
145+ $1.3873 $201.1585
190+ $1.3410 $254.7900
250+ $1.2023 $300.5750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,350 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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