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FGA50T65SHD

Part No FGA50T65SHD
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 650V 100A 319W TO-3PN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 650V
Current - Collector (Ic) (Maximum) 100A
Current - Collector Pulsed (Icm) 150A
Vce(on) (Maximum) at Vge, Ic 2.1V at 15V, 50A
Power - Max 319W
Switching Energy 1.28mJ (on), 384μJ (off)
Input Type Standard
Gate Charge 87nC
Td (on/off) at 25°C 22.4ns/73.6ns
Test Condition 400V, 50A, 6Ohm, 15V
Reverse Recovery Time (trr) 34.6ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-3P-3, SC-65-3
Supplier Device Package TO-3PN
Manufacturer Pack Quantity 450
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813624-FGA50T65SHD
Ultra Librarian 3D Model Ultra Librarian FGA50T65SHD CAD Model

Description

ON Semiconductor FGA50T65SHD IGBT

The ON Semiconductor FGA50T65SHD is a cutting-edge insulated gate bipolar transistor (IGBT) designed for high-efficiency and high-speed switching applications. This device is part of the high-performance Field Stop II IGBT family, which is renowned for its low conduction and switching losses. With a 650V collector-emitter voltage (V<sub>CE) and a 50A collector current rating, the FGA50T65SHD is equipped to handle challenging power applications.

The FGA50T65SHD utilizes proprietary trench gate field-stop technology, which allows for superior performance in terms of switching speed and energy efficiency. This technology also contributes to the device's improved thermal characteristics, ensuring reliability even under high-stress conditions. The IGBT is characterized by a low on-state voltage drop (V<sub>CE(sat)) that minimizes conduction losses and enhances overall system efficiency.

Key features of the FGA50T65SHD include a co-packaged fast recovery diode, which further optimizes the switching performance. The diode's soft recovery characteristics reduce electromagnetic interference (EMI) and stress on the device during turn-off, leading to increased longevity and stable operation. Additionally, the device boasts a high peak current capability, which is essential for applications that demand robust performance during transient conditions.

The FGA50T65SHD is well-suited for a variety of power applications, including uninterruptible power supplies (UPS), solar inverters, induction heating, and motor drives. Its robustness and high efficiency make it an ideal choice for engineers looking to improve the performance and reliability of their power systems.

Designed with ease of use in mind, the FGA50T65SHD comes in a TO-247 package, which is widely used in the industry and known for its excellent thermal properties. This packaging ensures compatibility with a broad range of heatsinks and cooling solutions, facilitating the integration of the IGBT into diverse designs.

In summary, ON Semiconductor's FGA50T65SHD IGBT is a high-performance, energy-efficient solution for modern power switching applications. Its advanced technology and robust design enable it to deliver superior performance, making it a top choice for engineers seeking to enhance their power system designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.1349 $57.8886
35+ $3.3934 $118.7690
53+ $3.2871 $174.2163
73+ $3.1809 $232.2057
94+ $3.0746 $289.0124
126+ $2.7570 $347.3820
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Availability: 10,995 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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