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FGAF20S65AQ

Part No FGAF20S65AQ
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 650V 20A TO-3PF / IGBT Trench Field Stop 650 V 40 A 75 W Through Hole TO-3PF-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer onsemi
Packaging Tube
Product Status Last Time Buy
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A
Power - Max 75 W
Switching Energy 345µJ (on), 95µJ (off)
Input Type Standard
Gate Charge 38 nC
Td (on/off) @ 25°C 18ns/102ns
Test Condition 400V, 10A, 23Ohm, 15V
Reverse Recovery Time (trr) 235 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Through Hole
Case / Package TO-3P-3 Full Pack
Supplier Device Package TO-3PF-3
Base Product Number FGAF20
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 488-FGAF20S65AQ
Standard Package 30
Win Source Part Number 1324410-FGAF20S65AQ
Ultra Librarian 3D Model Ultra Librarian FGAF20S65AQ CAD Model

Description

The ON Semiconductor FGAF20S65AQ is a high-performance Silicon Carbide (SiC) Schottky Diode designed to deliver superior efficiency, reliability, and thermal performance in a wide range of applications. This diode is part of ON Semiconductor's extensive portfolio of energy-efficient solutions, offering a forward current of 20A and a reverse voltage of 650V, making it an excellent choice for power conversion systems.

Key Features

  • High Forward Surge Capability: The FGAF20S65AQ is capable of handling high surge currents, ensuring durability and robustness during demanding conditions.
  • Zero Reverse Recovery Time: This diode offers zero reverse recovery time, which minimizes power loss and improves the efficiency of the application it is used in.
  • Low Forward Voltage Drop: The low forward voltage drop feature reduces conduction losses, contributing to overall system efficiency.
  • High-Temperature Operation: With a maximum operating junction temperature of 175°C, this diode can perform reliably in high-temperature environments.

Applications

  • Power Supply Units (PSUs)
  • Electric Vehicle (EV) Charging
  • Photovoltaic (PV) Inverters
  • Uninterruptible Power Supplies (UPS)
  • Motor Drives

The FGAF20S65AQ is suitable for high-frequency power switching applications and is optimized for power factor correction (PFC) circuits, AC-DC converters, and free-wheeling diodes in various power circuits. Its package is designed for optimal heat transfer and minimal space usage, making it ideal for compact power modules and systems.

Environmental & Reliability

ON Semiconductor is committed to environmental sustainability. The FGAF20S65AQ is RoHS compliant, ensuring that it meets the highest standards for environmental safety. Furthermore, the robustness of the SiC material provides excellent thermal stability and reliability over the product's lifecycle.

Whether for industrial, automotive, or consumer applications, the FGAF20S65AQ from ON Semiconductor is engineered to enhance performance while supporting energy conservation efforts across a broad spectrum of power electronics systems.

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