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FQP6N50C

Part No FQP6N50C
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 500V N-Channel MOSFET | MOSFET N-CH 500V 5.5A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 5.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 2.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 25nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 700pF at 25V
Power Dissipation (Maximum) 98W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220-3
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1175446-FQP6N50C
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQP6N50C CAD Model

Description

The ON Semiconductor FQP6N50C is a high-performance N-Channel QFET® MOSFET that offers excellent thermal and electrical capabilities. This power MOSFET is designed to handle high current and high voltage applications with ease, making it an ideal choice for power supply, lighting, motor control, and inverter applications.

Key Features

  • Voltage and Current: It has a drain-to-source voltage (Vdss) of 500V, continuous drain current (Id) of 6A, and a power dissipation of 48W, providing robust performance for a wide range of applications.
  • RDS(on): The FQP6N50C boasts a low on-resistance (RDS(on)) of 1.25 Ohms, which enhances its efficiency by reducing power loss during operation.
  • Gate Charge: It features a low gate charge (Qg) that improves the switching performance, which is crucial for high-frequency circuits.
  • TO-220 Package: The device is encapsulated in a TO-220 package, known for its excellent heat dissipation properties, allowing for better thermal management.

Applications

The FQP6N50C is versatile and can be used in various applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Pulse Width Modulated (PWM) controls
  • DC-to-AC inverters
  • Uninterruptible Power Supplies (UPS)
  • High-speed power switching applications

Reliability and Performance

ON Semiconductor's FQP6N50C is designed with reliability in mind. It features a rugged, high-performance design that can withstand the stresses of high-power and high-frequency operations. The MOSFET's inherent diode provides fast recovery, which is essential for reducing losses during switching and improving overall system efficiency.

Environmental and Regulatory Compliance

The FQP6N50C complies with RoHS and Halogen-Free standards, ensuring that it meets the latest environmental regulations and is suitable for use in green products.

Conclusion

With its robust design, high efficiency, and versatile application range, the ON Semiconductor FQP6N50C is an excellent choice for designers who require a reliable MOSFET for high-voltage and high-current applications. Its compliance with environmental standards further enhances its appeal in the current market, where sustainability is of increasing importance.

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