ON Semiconductor FQPF5N50C MOSFET Overview

The FQPF5N50C is a robust N-channel QFET® MOSFET produced by ON Semiconductor, designed to deliver high performance in a wide range of applications. This power MOSFET is built using ON Semiconductor's proprietary technology that aims to optimize the device for high-speed switching applications and systems that require low on-resistance.

Key Features

• Voltage and Current Ratings: It supports a drain-to-source voltage (Vdss) of 500V, with a continuous drain current (Id) of 4.5A, making it suitable for high-voltage applications.
• Low On-Resistance: With an Rds(on) of 1.6 Ohms, the FQPF5N50C offers efficient conduction and minimizes power losses, contributing to the overall efficiency of the system it's integrated into.
• High-Speed Switching: The device is designed for fast switching speeds, which is essential for reducing switching losses and improving performance in power conversion applications.
• Low Gate Charge: A low gate charge (Qg) facilitates faster switching and reduces power consumption during the switching transient.
• TO-220F Package: Housed in a TO-220F package, the FQPF5N50C offers good thermal performance and is easy to mount on a variety of PCB designs.

Applications

The versatility of the FQPF5N50C allows it to be used in a multitude of applications, including but not limited to:

• Power supplies for servers, telecom, and networking equipment.
• PFC (Power Factor Correction) circuits in consumer electronics.
• DC/AC converters for solar inverters and other renewable energy systems.
• Motor drives and controllers for industrial automation.
• Electronic ballasts for lighting solutions.

With its high voltage capability and energy-efficient design, the FQPF5N50C is an excellent choice for engineers looking to enhance system reliability and performance while managing thermal and power constraints. ON Semiconductor's commitment to quality ensures that the FQPF5N50C MOSFET meets the rigorous demands of modern electronic systems.