The HUF75631S3S is a high-performance, N-Channel UltraFET Power MOSFET designed by ON Semiconductor, a leading provider of semiconductor-based solutions. This advanced MOSFET is engineered to deliver efficient power management and conversion for a variety of applications, making it a versatile choice for designers and engineers.

Key Features

• Low On-Resistance: The HUF75631S3S features an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
• High Current Capacity: With its ability to handle high currents, this MOSFET is suitable for demanding power applications, ensuring reliable performance even under high load conditions.
• Robust Thermal Characteristics: The device's excellent thermal management capabilities ensure stable operation over a wide temperature range, making it ideal for high-temperature environments.
• Gate Charge Optimization: The optimized gate charge of the HUF75631S3S allows for faster switching speeds, which is crucial for high-frequency applications.
• Rugged Package: Encased in a TO-263 package, the MOSFET provides a durable and reliable solution for various electronic assemblies.

Applications

The HUF75631S3S MOSFET is well-suited for a range of applications due to its high efficiency and power handling capabilities. Typical applications include:

• DC/DC converters
• Motor drives
• Power management systems
• Switch mode power supplies (SMPS)
• Automotive applications

Technical Specifications

Some of the technical specifications of the HUF75631S3S include:

• Voltage Rating (V<sub>DS): 100V
• Continuous Drain Current (I<sub>D): 56A
• Power Dissipation (P<sub>D): 167W
• R<sub>DS(on): 8.0 mΩ
• Operating Temperature Range: -55°C to 175°C

ON Semiconductor's commitment to quality and performance is evident in the HUF75631S3S MOSFET, making it a reliable choice for professionals looking to optimize their power designs.