The ON Semiconductor LMB2907AWT1 is a highly efficient, bipolar junction transistor (BJT) designed to deliver top-notch performance for a wide range of electronic applications. This product is part of the LMB2900 series, known for their reliability and versatility in various circuits, including switching and amplification tasks.

Key Features

• Device Type: NPN Bipolar Junction Transistor (BJT)
• Configuration: Single
• Collector-Emitter Voltage (VCEO): 40V
• Collector-Base Voltage (VCBO): 60V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current - Continuous (IC): 600mA
• Power Dissipation (Pd): 350mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Operating and Storage Junction Temperature Range: -55°C to +150°C

Applications

The LMB2907AWT1 is suitable for a variety of applications, including but not limited to:

• General-purpose switching
• Amplification circuits
• Signal processing
• Power management
• Consumer electronics
• Automotive modules

Product Quality and Packaging

ON Semiconductor is committed to providing high-quality products that meet the stringent requirements of the electronics industry. The LMB2907AWT1 is available in a SOT-323 package, which is designed for surface mount technology (SMT). This compact package allows for efficient use of PCB space, making it ideal for space-constrained applications.

Environmental Compliance

The LMB2907AWT1 is compliant with RoHS (Restriction of Hazardous Substances) directives, ensuring that it is free from certain hazardous materials commonly used in electronics. This compliance reflects ON Semiconductor's dedication to environmental responsibility and the production of safer electronic components.

Ordering Information

For ordering, the product is designated as LMB2907AWT1G, where 'G' signifies that the product is RoHS compliant. The device is supplied in tape and reel packaging, facilitating efficient handling and assembly during the manufacturing process.