ON Semiconductor MBT3946DWT1G Dual Bipolar Transistor

The MBT3946DWT1G is a high-performance dual bipolar transistor manufactured by ON Semiconductor, a leader in energy-efficient innovations. This small signal transistor is designed for general purpose and amplifier applications and is known for its reliability and efficiency. It is a versatile component that is widely used in a variety of electronic circuits.

Key Features

• Type: NPN & PNP
• Configuration: Dual
• Collector- Emitter Voltage (VCEO): 40V
• Collector-Base Voltage (VCBO): 40V (NPN), 40V (PNP)
• Emitter-Base Voltage (VEBO): 5V (NPN), 5V (PNP)
• Collector Current (IC): 200mA
• Power Dissipation: 225mW
• DC Current Gain (hFE): 100 to 300
• Operating Temperature: -55°C to +150°C
• Package: SOT-363
• RoHS: Compliant

The MBT3946DWT1G features a compact SOT-363 package which is ideal for space-constrained applications. It includes both an NPN and a PNP transistor, making it flexible for complementary or push-pull designs. The device is capable of handling moderate power levels with a maximum collector current of 200mA and a power dissipation of 225mW, making it suitable for a wide range of applications.

With a collector-emitter voltage of 40V, the MBT3946DWT1G can be used in circuits with relatively high voltage requirements. The device also boasts a broad operating temperature range from -55°C to +150°C, ensuring stability and performance under extreme conditions.

ON Semiconductor has designed the MBT3946DWT1G with energy efficiency in mind. The device's low saturation voltage reduces power loss, making it an excellent choice for power-sensitive designs. Additionally, it is RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability.

In summary, the MBT3946DWT1G from ON Semiconductor is a highly reliable dual bipolar transistor that offers a balance of performance, efficiency, and versatility, making it a go-to choice for designers and engineers in various electronic applications.