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MCH3312-TL-E

Part No MCH3312-TL-E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Manufacturer ON Semiconductor
Win Source Part Number 225297-MCH3312-TL-E
Popularity Low
Supply and Demand Status Balance
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 145mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 10 V
Power Dissipation (Max) 1W (Ta)
Operating Temperature 150°C
Grade -
Mounting Type Surface Mount
Supplier Device Package 3-MCPH
Package / Case 3-SMD, Flat Leads
Ultra Librarian 3D Model Ultra Librarian MCH3312-TL-E CAD Model

Description

The MCH3312-TL-E from ON Semiconductor is a high-performance, P-Channel MOSFET designed for use in a variety of applications. This MOSFET features a compact SOT-723 package, making it ideal for space-constrained applications while providing excellent power management capabilities.

Key Features:

  • Low On-Resistance: The MCH3312-TL-E boasts a low on-resistance, which reduces power loss and improves efficiency in electronic circuits.
  • High-Speed Switching: With its ability to switch on and off rapidly, this MOSFET is suitable for high-speed applications, offering improved performance for power conversion and regulation.
  • P-Channel Device: As a P-Channel MOSFET, it is typically used in low-side switching applications and can be driven at lower gate voltages compared to N-Channel MOSFETs, simplifying the drive circuitry.
  • Small Package Size: The SOT-723 package is not only space-saving but also allows for a reduction in the overall weight of the end product, which is especially beneficial in portable and wearable technology.
  • High Reliability: ON Semiconductor's commitment to quality ensures that the MCH3312-TL-E is a reliable component for long-term use in critical applications.

Applications:

The MCH3312-TL-E is versatile and can be used in various applications, including:

  • Power Management Circuits
  • Load Switches
  • Battery Management Systems
  • DC/DC Converters
  • Portable Devices
  • Wearable Technology

Technical Specifications:

Parameter Value Drain-Source Voltage (V<sub>DS) -20 V Gate-Source Voltage (V<sub>GS) ±8 V Continuous Drain Current (I<sub>D) -2 A Power Dissipation (P<sub>D) 0.8 W Operating Temperature Range -55°C to +150°C

With its robust design and efficient performance, the MCH3312-TL-E MOSFET from ON Semiconductor is an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
335+ $0.1746 $58.4910
810+ $0.1434 $116.1540
1,250+ $0.1388 $173.5000
1,720+ $0.1344 $231.1680
2,225+ $0.1300 $289.2500
2,980+ $0.1164 $346.8720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,500 pieces
MOQ: 335 pcs
Order Increment : 1 pcs
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