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MCH6602-TL-E

Part No MCH6602-TL-E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 0.35A MCPH6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 350mA
Maximum Rds On at Id,Vgs 3.7 Ohm @ 80mA, 4V
Max Gate Charge 1.58nC @ 10V
Max Input Capacitance 7pF @ 10V
Maximum Power Dissipation 800mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-MCPH
Win Source Part Number 003363-MCH6602-TL-E
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MCH6602-TL-E CAD Model

Description

ON Semiconductor MCH6602-TL-E MOSFET

The MCH6602-TL-E from ON Semiconductor is a high-performance Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for a variety of applications that require efficient power management and high-speed switching. This MOSFET is part of ON Semiconductor's extensive portfolio of energy-efficient devices, catering to the needs of modern electronic circuits.

The MCH6602-TL-E is a P-channel MOSFET that features a compact and surface-mount package, specifically the SOT-23, which is well-suited for space-constrained applications. This device offers a drain-source voltage (V<sub>DS) of -20V and a continuous drain current (I<sub>D) of -6A, making it capable of handling moderate power levels in a small form factor. Its low on-resistance (R<sub>DS(on)) ensures high efficiency and reduced power losses during operation.

With a fast switching speed, the MCH6602-TL-E is an ideal choice for applications such as load switching, power management in portable devices, and other low-voltage power control systems. It is also suitable for use in battery management, DC-DC converters, and motor control circuits, where efficient power conversion is crucial.

The device's built-in gate protection diode provides enhanced protection against electrostatic discharge (ESD), thereby improving the reliability and longevity of the MOSFET in sensitive environments. Additionally, the MCH6602-TL-E is designed to operate over a broad temperature range, which makes it versatile for use in various operating conditions.

ON Semiconductor's commitment to environmental sustainability is evident in the MCH6602-TL-E, as it is compliant with RoHS (Restriction of Hazardous Substances) directives, ensuring that it is free from hazardous materials and suitable for use in eco-friendly products.

Overall, the MCH6602-TL-E MOSFET is a reliable and efficient solution for designers looking to optimize power consumption and maximize performance in their electronic designs. Its robustness, combined with ON Semiconductor's quality and support, makes it a smart choice for a wide range of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
330+ $0.1767 $58.3110
795+ $0.1455 $115.6725
1,230+ $0.1409 $173.3070
1,695+ $0.1363 $231.0285
2,195+ $0.1317 $289.0815
2,945+ $0.1178 $346.9210
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,440 pieces
MOQ: 330 pcs
Order Increment : 1 pcs
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