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MJE180G

Part No MJE180G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Complementary Plastic Silicon Power Transistors 40 - 60 - 80 VOLTS 12.5 WATTS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 3A
Voltage - Collector Emitter Breakdown (Maximum) 40V
Vce Saturation (Maximum) @ Ib, Ic 1.7V @ 600mA, 3A
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 50 @ 100mA, 1V
Power - Max 1.5W
Frequency - Transition 50MHz
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-225AA, TO-126-3
Manufacturer Package TO-225AA
Win Source Part Number 1223714-MJE180G
Manufacturer Homepage www.onsemi.com
Family Name MJE180
Introduction Date February 14, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2023
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MJE180G CAD Model

Description

The MJE180G from ON Semiconductor is a PNP power transistor, designed for use in a wide range of electronic applications. This device is particularly suited for linear and switching applications, providing reliable performance in a compact package. With its robust construction and proven semiconductor technology, the MJE180G is an essential component for designers looking to create efficient and durable power management systems.

Key features of the MJE180G include a continuous collector current of up to 3A, which allows for significant power handling capability. The device operates at a collector-emitter voltage of up to 80V, ensuring that it can handle high voltage applications with ease. Additionally, the power dissipation is rated at 20W, which contributes to its ability to manage thermal conditions effectively during operation.

The MJE180G exhibits excellent gain characteristics with a minimum DC current gain (hFE) of 40 when the collector current is at 500mA, making it an efficient choice for amplification purposes. Its fast switching times make it suitable for high-frequency operations, ensuring that it can be used in a variety of fast-switching applications without performance degradation.

This power transistor is enclosed in a TO-225 case, which not only provides a solid structure but also facilitates heat dissipation. The package is designed to be mounted easily onto a printed circuit board (PCB) and is compatible with various soldering techniques, which simplifies the assembly process and allows for greater flexibility in the design of electronic circuits.

The MJE180G is also characterized by its high reliability and long operational life, which is a testament to ON Semiconductor's commitment to quality. This component complies with RoHS environmental standards, ensuring that it meets global regulatory requirements for hazardous substance control.

In summary, the ON Semiconductor MJE180G PNP power transistor is a versatile and robust component that offers high power handling, fast switching, and reliable performance for a diverse range of applications. Whether used in power supply circuits, motor controllers, or audio amplifiers, this transistor is an excellent choice for engineers and designers seeking a dependable power management solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0104 $50.5200
125+ $0.8290 $103.6250
190+ $0.8031 $152.5890
260+ $0.7772 $202.0720
335+ $0.7513 $251.6855
450+ $0.6736 $303.1200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,850 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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