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MJW21193G

Part No MJW21193G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Transistor Type PNP
Current - Collector (Ic) (Maximum) 16A
Voltage - Collector Emitter Breakdown (Maximum) 250V
Vce Saturation (Maximum) @ Ib, Ic 4V @ 3.2A, 16A
Current - Collector Cutoff (Maximum) 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 20 @ 8A, 5V
Power - Max 200W
Frequency - Transition 4MHz
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247
Win Source Part Number 1223809-MJW21193G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name MJW21193
Introduction Date May 15, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2023
Ultra Librarian 3D Model Ultra Librarian MJW21193G CAD Model

Description

The MJW21193G is a high-power, high-performance silicon NPN transistor designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This transistor is specifically engineered for high-voltage, high-speed power switching in inductive circuits where fall time is critical. It is commonly used in power amplifiers and switching power supplies, making it an essential component for both consumer electronics and industrial applications.

Key Features

  • High Voltage Capability: The MJW21193G can handle high voltage operations, making it suitable for applications requiring up to 250V.
  • High Current Rating: With a continuous collector current rating of 16A, this transistor can handle significant power, suitable for demanding applications.
  • High Speed: Designed for high-speed switching, this component features a fast switching speed, which is crucial in reducing switching losses and improving efficiency.
  • High Power Dissipation: With a power dissipation of 200W, the MJW21193G can manage the thermal challenges associated with high-power applications.
  • Complementary PNP Type: It has a complementary PNP type MJW21194G, allowing for flexibility in push-pull amplifier designs.

Applications

  • Audio Power Amplifiers
  • Switching Power Supplies
  • Power Inverters
  • Motor Controllers

Quality and Reliability

ON Semiconductor's MJW21193G is built with attention to quality and reliability. It features enhanced ruggedness and a robust design, ensuring long-term reliability even in harsh conditions. The device is also Pb-free, Halogen-free/BFR-free and is RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability.

Technical Specifications

Parameter Value Collector-Emitter Voltage (Vceo) 250V Collector Current (Ic) 16A Power Dissipation (Pd) 200W DC Current Gain (hFE) 15 - 60 Operating Temperature -65°C to 150°C

With its combination of high-voltage and high-current capabilities, fast switching speed, and high power dissipation, the MJW21193G from ON Semiconductor is a reliable choice for designers looking to enhance the performance and efficiency of their power switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.4154 $52.9848
28+ $3.6229 $101.4412
43+ $3.5097 $150.9171
59+ $3.3965 $200.3935
77+ $3.2833 $252.8141
102+ $2.9436 $300.2472
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Availability: 1,021 pieces
MOQ: 12 pcs
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