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MMBT5401LT1G

Part No MMBT5401LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description Trans GP BJT PNP 150V 0.5A 300mW 3-Pin SOT-23 T/R / TRANS PNP 150V 0.5A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 150V
Max Vce (sat) 500mV @ 5mA, 50mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 60 @ 10mA, 5V
Maximum Power Dissipation 300mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 023774-MMBT5401LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Automotive
Family Name MMBT5401L
Introduction Date December 21, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian MMBT5401LT1G CAD Model

Description

MMBT5401LT1G - PNP Transistor from ON Semiconductor

The MMBT5401LT1G is a high-quality PNP bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This transistor is a versatile component commonly used in amplification and switching applications, ensuring reliable performance in a wide range of electronic circuits.

Key Features:

  • Type: PNP
  • Package: SOT-23 (TO-236)
  • Collector-Emitter Voltage (VCEO): 150V
  • Collector-Base Voltage (VCBO): 160V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 600 mA
  • Power Dissipation (Pd): 350 mW
  • DC Current Gain (hFE): 100 to 300 at 10 mA
  • Operating and Storage Junction Temperature Range: -55°C to +150°C
  • RoHS Compliant: Yes

The MMBT5401LT1G transistor is housed in a small SOT-23 package, making it ideal for space-constrained applications. Its compact size does not compromise its electrical performance, which includes a high collector-emitter voltage of 150V, allowing it to handle higher voltage applications efficiently. The device also boasts a collector current rating of 600 mA, making it suitable for moderate power applications.

ON Semiconductor has designed the MMBT5401LT1G with a focus on reliability and efficiency. The transistor's high DC current gain ensures that it can be driven by a small base current, while the low collector-emitter saturation voltage minimizes power loss and heat generation. This feature is particularly important in battery-operated devices where power conservation is crucial.

The MMBT5401LT1G is also characterized by its robust thermal performance, with an operating and storage temperature range of -55°C to +150°C. This wide temperature range ensures stable operation across various environmental conditions.

As an environmentally conscious product, the MMBT5401LT1G is RoHS compliant, meaning it does not contain hazardous substances such as lead, making it suitable for use in electronic products that are marketed in regions with strict environmental regulations.

In summary, the MMBT5401LT1G from ON Semiconductor is a reliable and efficient PNP transistor that is perfect for designers looking for a component that offers a balance between size, power handling, and performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,480+ $0.0202 $50.0960
5,265+ $0.0190 $100.0350
8,200+ $0.0183 $150.0600
11,765+ $0.0170 $200.0050
15,245+ $0.0164 $250.0180
18,990+ $0.0158 $300.0420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 363,000 pieces
MOQ: 2480 pcs
Order Increment : 1 pcs
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