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MMBT589LT1G

Part No MMBT589LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 1A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 650mV @ 200mA, 2A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 100 @ 500mA, 2V
Maximum Power Dissipation 310mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 023780-MMBT589LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMBT589LT1G CAD Model

Description

Product Overview: MMBT589LT1G from ON Semiconductor

The MMBT589LT1G is a high-performance NPN bipolar junction transistor (BJT) developed by ON Semiconductor, a leader in energy-efficient innovations. This semiconductor device is designed for use in a wide variety of electronic applications, including signal processing, amplification, and switching. The MMBT589LT1G is a testament to ON Semiconductor's commitment to providing advanced electronic components that meet the needs of modern electronic systems.

Key Features

  • Device Type: NPN Bipolar Junction Transistor (BJT)
  • Package: SOT-23, a small and efficient surface-mount package that is suitable for automated assembly processes and space-constrained applications.
  • Collector-Emitter Voltage (Vceo): Capable of withstanding voltages up to 12V, making it suitable for a range of low to medium voltage applications.
  • Collector Current (Ic): It can handle a continuous collector current of up to 50mA, which is adequate for signal processing and general-purpose switching.
  • Power Dissipation (Pd): With a power dissipation rating of 225mW, the MMBT589LT1G can effectively handle the thermal energy generated during operation without compromising performance.
  • DC Current Gain (hFE): It features a high DC current gain, which allows for efficient current amplification in electronic circuits.
  • Operating Temperature Range: The device is designed to operate within a temperature range of -55°C to +150°C, ensuring reliability across various environmental conditions.
  • RoHS Compliant: This product is manufactured in compliance with RoHS standards, minimizing the environmental impact by excluding hazardous substances.

Applications

The MMBT589LT1G is versatile and can be used in a multitude of applications. It is commonly employed in:

  • Audio amplifiers and pre-amplifiers
  • Signal processing circuits
  • Switching circuits
  • Linear amplification stages
  • Driver stages in hi-fi systems and televisions

Quality and Reliability

ON Semiconductor's MMBT589LT1G is built with high-quality materials and is subjected to rigorous testing to ensure it meets industry standards for reliability and performance. Customers can trust this component for consistent operation and long-term durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.1991 $50.7705
540+ $0.1865 $100.7100
835+ $0.1802 $150.4670
1,195+ $0.1676 $200.2820
1,550+ $0.1613 $250.0150
1,940+ $0.1550 $300.7000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,831 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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