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MMBT6521LT1G

Part No MMBT6521LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 25V 0.1A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Max Vce (sat) 500mV @ 5mA, 50mA
Collector Cut-off Current(Max) 500nA (ICBO)
Typical Gain (hFE) (Min) 300 @ 2mA, 10V
Maximum Power Dissipation 225mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 1078278-MMBT6521LT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MMBT6521LT1G CAD Model

Description

ON Semiconductor MMBT6521LT1G Product Overview

The MMBT6521LT1G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This small-signal transistor is notable for its compact SOT-23 surface-mount package, making it an excellent choice for space-constrained designs. The device is engineered to offer a balance of good amplification and switching characteristics, which makes it a versatile component in both analog and digital circuits.

Key Features

  • Voltage and Current Ratings: With a collector-emitter voltage (VCEO) of 500V, the MMBT6521LT1G can handle high voltage applications. It also supports a continuous collector current (IC) of up to 500mA, which is suitable for moderate power requirements.
  • High Gain Bandwidth Product: The device offers a transition frequency (fT) of 50MHz, providing a good frequency response for amplification purposes in RF and other high-speed signal applications.
  • Thermal Performance: The SOT-23 package is designed for optimal thermal management, ensuring reliability and performance even under conditions of elevated temperature.
  • Low Saturation Voltage: It features low collector-emitter saturation voltage, which reduces power loss and improves efficiency in switching applications.

Applications

The MMBT6521LT1G is suited for a variety of applications, including but not limited to:

  • Power Management Circuits
  • Switching Regulators
  • Motor Control Drivers
  • Signal Amplification
  • Audio Amplifiers
  • Telecommunication Circuits

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the MMBT6521LT1G is no exception. The device is manufactured to meet the high standards of reliability and performance expected from industry-leading semiconductor products. It is designed to withstand the rigors of commercial and industrial applications, ensuring a reliable operation over its intended lifespan.

Environmental Compliance

The MMBT6521LT1G is compliant with RoHS and Pb-Free standards, reflecting ON Semiconductor's dedication to environmental responsibility. This compliance ensures that the product is suitable for use in a variety of markets, including those with strict environmental regulations.

With its robust features and ON Semiconductor's reputation for quality, the MMBT6521LT1G is an excellent choice for designers looking for a reliable and efficient NPN transistor for their electronic designs.

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