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DMN63D8LDW-7

Part No DMN63D8LDW-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R / MOSFET 2N-CH 30V 0.22A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 220mA
Maximum Rds On at Id,Vgs 2.8 Ohm @ 250mA, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 870nC @ 10V
Max Input Capacitance 22pF @ 25V
Maximum Power Dissipation 300mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-363
Win Source Part Number 1033800-DMN63D8LDW-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name DMN63D8LDW
Introduction Date November 05, 2012
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian DMN63D8LDW-7 CAD Model

Description

Product Overview: DMN63D8LDW-7 - Diodes Incorporated

The DMN63D8LDW-7 is a high-performance, dual N-channel enhancement mode field effect transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This product is well-suited for a variety of applications, including load switch, power management, and other general-purpose switching applications where high efficiency is a priority.

Constructed with advanced trench MOSFET technology, the DMN63D8LDW-7 offers low on-resistance and a low gate charge, making it an efficient choice for power conversion circuits. The device is housed in a compact SOT-363 package, which is ideal for space-constrained applications. Its small form factor does not compromise its electrical performance, making it a versatile component in both portable and stationary electronics.

Key Features:

  • Low On-Resistance: The device has a very low RDS(on), which reduces conduction losses and improves overall efficiency in circuits.
  • High-Speed Switching: Fast switching speeds make the DMN63D8LDW-7 suitable for high-frequency applications.
  • Dual N-Channel: The dual N-channel configuration allows for flexibility in design, enabling the control of two separate circuits within a single package.
  • Low Threshold Voltage: The low gate threshold voltage ensures easy drive capability and is compatible with low-voltage logic level signals.
  • RoHS Compliant: The component is compliant with RoHS standards, ensuring it meets environmental and safety requirements.

Applications:

  • Power Management
  • DC/DC Converters
  • Battery Powered Devices
  • Load Switching
  • Motor Control

The DMN63D8LDW-7 by Diodes Incorporated represents a balance between performance and compactness, providing a reliable and efficient solution for designers looking to optimize their power management systems. Its features make it an excellent choice for a wide range of applications that demand high efficiency, fast switching, and minimal footprint.

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Pricing & Ordering

Quantity Unit Price Ext. Price
950+ $0.0528 $50.1600
2,025+ $0.0495 $100.2375
3,140+ $0.0478 $150.0920
4,495+ $0.0445 $200.0275
5,845+ $0.0428 $250.1660
7,300+ $0.0411 $300.0300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 531,285 pieces
MOQ: 950 pcs
Order Increment : 1 pcs
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