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MMBTH10M3T5G

Part No MMBTH10M3T5G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description RF TRANS NPN 25V 650MHZ SOT723
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr ON Semiconductor
Package Tape & Reel
Product Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 25V
Frequency - Transition 650MHz
Power - Max 265mW
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package SOT-723
Base Product Number MMBTH10
Standard Package 8,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 740104-MMBTH10M3T5G
Ultra Librarian 3D Model Ultra Librarian MMBTH10M3T5G CAD Model

Description

The MMBTH10M3T5G is a cutting-edge NPN RF transistor developed by ON Semiconductor, a leader in energy-efficient innovations. This high-performance transistor is specifically designed to meet the demanding requirements of RF applications. The MMBTH10M3T5G offers a perfect blend of high gain, wide bandwidth, and low noise, making it an ideal choice for a variety of wireless communication systems.

Key Features

  • High Transition Frequency (f<sub>T): With a transition frequency of 7 GHz, the MMBTH10M3T5G is optimized for high-speed signal amplification, ensuring efficient operation in high-frequency applications.
  • Low Noise Figure: The transistor is engineered to have a low noise figure, which is critical for maintaining signal integrity in RF circuits.
  • Excellent Gain Bandwidth Product: It boasts a robust gain bandwidth product, which is indicative of its ability to amplify signals across a wide range of frequencies without significant loss of gain.
  • Surface-Mount Package: Packaged in a compact SOT-23 surface-mount package, the MMBTH10M3T5G is designed for space-constrained applications and is easy to integrate into modern PCB designs.

Applications

The versatility of the MMBTH10M3T5G allows it to be used in a broad spectrum of applications, including but not limited to:

  • VHF and UHF amplifiers
  • Mixers and oscillators in RF circuits
  • Low noise amplifiers for receivers
  • IF amplifiers in TV and radio broadcast receivers

Quality and Reliability

ON Semiconductor is committed to providing high-quality products, and the MMBTH10M3T5G is no exception. It is manufactured with precision to ensure reliable performance and durability. The device is also RoHS compliant, reflecting ON Semiconductor's dedication to environmental sustainability.

Summary

The MMBTH10M3T5G from ON Semiconductor is a high-performance, low-noise NPN RF transistor that is ideal for a wide range of high-frequency applications. Its compact size, combined with exceptional electrical characteristics, makes it a preferred choice for design engineers looking to enhance RF performance in their products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,055+ $0.0474 $50.0070
2,575+ $0.0389 $100.1675
3,980+ $0.0377 $150.0460
5,480+ $0.0365 $200.0200
7,085+ $0.0353 $250.1005
9,495+ $0.0316 $300.0420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,200 pieces
MOQ: 1055 pcs
Order Increment : 1 pcs
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