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MMDF3N04HDR2

Part No MMDF3N04HDR2
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 3.4A 8-SOIC
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Cut Reel
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 3.4A
Maximum Rds On at Id,Vgs 80 mOhm @ 3.4A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 900pF @ 32V
Maximum Power Dissipation 1.39W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 117841-MMDF3N04HDR2
Ultra Librarian 3D Model Ultra Librarian MMDF3N04HDR2 CAD Model

Description

ON Semiconductor MMDF3N04HDR2: A Robust Power MOSFET

The MMDF3N04HDR2 is a high-performance Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This device is part of the MOSFET portfolio that caters to a wide range of power applications, known for its reliability and efficiency. The MMDF3N04HDR2 is specifically engineered to handle high-density power and control applications, making it an ideal choice for designers looking to optimize power management in their circuits.

Key Features

  • High Drain-Source Voltage (V<sub>DS): With a V<sub>DS of 40V, the MMDF3N04HDR2 can comfortably handle the demands of high-voltage operations, providing a robust buffer against voltage spikes and surges.
  • Low On-Resistance (R<sub>DS(on)): The device boasts a low on-resistance, which minimizes conduction losses and improves overall efficiency. This feature is particularly beneficial in reducing power dissipation and improving thermal performance.
  • High Continuous Drain Current (I<sub>D): It supports a high continuous drain current, enabling it to drive high-current loads with ease, which is crucial for applications requiring significant power throughput.
  • Fast Switching Speed: The MMDF3N04HDR2 is designed for fast switching, reducing the transition losses and enhancing the performance in high-frequency applications.
  • Thermal Management: ON Semiconductor has incorporated advanced thermal management technologies into the MMDF3N04HDR2, ensuring that the device operates within safe temperature ranges even under high power conditions.

Applications

The MMDF3N04HDR2 is versatile and can be used in a variety of applications, including:

  • DC to DC converters
  • Power management systems
  • Motor drives
  • Automotive applications
  • Switching regulators

Package and Quality

The MMDF3N04HDR2 comes in a compact surface-mount package, which allows for efficient use of PCB space without compromising performance. ON Semiconductor is committed to high quality and reliability, and this MOSFET is no exception. It is designed to meet stringent industry standards, ensuring stable operation and long service life under various conditions.

In conclusion, the MMDF3N04HDR2 from ON Semiconductor represents a blend of performance, efficiency, and reliability, making it an excellent choice for designers looking to improve power management in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,790 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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