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PSMN057-200P

Part No PSMN057-200P
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 39A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 96nC @ 10V
Max Input Capacitance 3750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 57 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 042230-PSMN057-200P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN057-200P CAD Model

Description

The PSMN057-200P is a high-performance N-channel MOSFET produced by NXP Semiconductors, a leader in the field of advanced secure connectivity solutions. This power MOSFET is designed to deliver optimal performance in a wide range of applications, from automotive to industrial, power management, and computing.

Key Features

  • Low On-state Resistance: The PSMN057-200P boasts an extremely low on-state resistance (R<sub>DS(on)) of only 57 mΩ at V<sub>GS = 10 V, which significantly reduces power losses and improves efficiency in high-current applications.
  • High Current Capability: With a continuous drain current (I<sub>D) of 200 A, this MOSFET can handle high current loads, making it suitable for robust power supply systems and demanding power conversion tasks.
  • Enhanced Power Density: Its compact footprint and high current rating contribute to an increased power density, which is essential for minimizing space and improving thermal performance in compact designs.
  • Robust Thermal Performance: The PSMN057-200P is encapsulated in a TO-220 package, which is known for its excellent thermal conduction properties, ensuring the device operates reliably even under high temperature conditions.
  • Fast Switching Speed: It offers fast switching performance, which is critical for reducing switching losses in high-frequency power conversion systems.
  • High Avalanche Ruggedness: The device is engineered to withstand high energy pulses in the avalanche and commutation modes, which adds to its reliability and durability in harsh environments.

Applications

The versatility of the PSMN057-200P allows it to be used in various applications, including:

  • DC/DC converters and DC/AC inverters
  • Motor drives and controllers
  • Power management systems
  • Switching regulators
  • Automotive applications and powertrains
  • Uninterruptible power supplies (UPS)

With its combination of low on-resistance, high current handling, and fast switching capabilities, the PSMN057-200P MOSFET from NXP stands out as a superior choice for designers looking to optimize their power systems for both performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0513 $61.5390
70+ $1.6828 $117.7960
110+ $1.6309 $179.3990
150+ $1.5777 $236.6550
190+ $1.5258 $289.9020
255+ $1.3675 $348.7125
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 6,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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